Yoshiaki Matsushita

4805419 Absorption type heat exchanging apparatus

Tetsuro Furukawa, Kensuke Yoshikawa, Mitsuru Mizuuchi, 1990 .

Method of making fault-free surface zone in semiconductor devices by step-wise heat treating

Yoshiaki Matsushita, Masaru Kanamori, Kazutoshi Nagasawa, 1983 .

A NUMERICAL METHOD FOR AN ANALYSIS OF SHIELD SEGMENT RINGS UNDER CONSIDERATION OF LONGITUDINAL RIGIDITY

Yoshiaki Matsushita, Noriyuki Horichi, Masaharu Hirashima, 1989 .

Kinetics of self‐interstitials generated at the Si/SiO2 interface

Yoshiaki Matsushita, Dimitri A. Antoniadis, D. Antoniadis, 1983 .

Precise Control of Annealed Wafer For Nanometer Devices

Yoshiaki Matsushita, R. Takeda, Hiromi Nagahama, 2006 .

Surface modification of silicon (111) by annealing at high temperature in hydrogen

Hiroshi Shirai, Lei Zhong, Yoshiaki Matsushita, 1996 .

Thickness Dependence of Dielectric Breakdown Failure of Thermal SiO2 Films

Kenji Taniguchi, Yoshiaki Matsushita, Kikuo Yamabe, 1983, 21st International Reliability Physics Symposium.

Improvement of thin oxide quality by hydrogen annealed wafer

Yoshiaki Matsushita, Hiroyasu Kubota, Y. Matsushita, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate

Yoshiaki Matsushita, Masahiro Kashiwagi, Y. Matsushita, 1982 .