G. I. Ng

Introduction to the special section on the Fifth IEEE International Nanoelectronics Conference (IEEE INEC)

Daohua Zhang, G. I. Ng, 2014 .

W-band monolithic oscillator using InAlAs/InGaAs HEMT

Youngwoo Kwon, M. Tutt, R. Lai, 1990 .

Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers

A. Freudenthal, Y. Hwang, D.C.W. Lo, 1996 .

180 GHz InAlAs/InGaAs HEMT monolithic integrated frequency doubler

Youngwoo Kwon, M. Tutt, D. Pavlidis, 1991, [1991] GaAs IC Symposium Technical Digest.

Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate

S. Arulkumaran, G. I. Ng, G. Ng, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

F/sub max/-enhancement in CBE-grown InAlAs/InGaAs HEMT's using novel self-aligned offset-gate technology

Dimitris Pavlidis, George I. Haddad, Youngwoo Kwon, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band

Youngwoo Kwon, T. L. Brock, D. Pavlidis, 1993 .

A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs

G. I. Haddad, Youngwoo Kwon, D. Pavlidis, 1992, GaAs IC Symposium Technical Digest 1992.

GaN-on-Silicon integration technology

W. M. Lim, K. S. Ang, S. Arulkumaran, 2012, 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).

A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier

K. L. Tan, P. D. Chow, D. C. Streit, 1995, IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers.

W-band monolithic mixer using InAlAs/InGaAs HEMT

Youngwoo Kwon, M. Tutt, D. Pavlidis, 1990, 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).

Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x>0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's

M. Tutt, D. Pavlidis, G. I. Ng, 1992 .

Submicron pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs with high cut-off and current-drive capability

K. L. Tan, Dimitris Pavlidis, D. C. Streit, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology

D. Pavlidis, G. I. Ng, K. Hong, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures

Soon Fatt Yoon, G. I. Ng, K. Radhakrishnan, 2000 .

High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTs

Youngwoo Kwon, R. Lai, D. Pavlidis, 1991, [1991] GaAs IC Symposium Technical Digest.