C. Busseret

Parameters extraction of hafnium based gate oxide capacitors

T. Nguyen, C. Busseret, Liviu Militaru, 2007, Microelectron. Reliab..

Peculiarities of electron tunnel injection to the drain of EEPROMs

C. Busseret, Nicolas Baboux, Carole Plossu, 2007, Microelectron. Reliab..

Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks

C. Busseret, E. Langer, C. Fiegna, 2007, IEEE Transactions on Electron Devices.

A three charge-states model for silicon nanocrystals nonvolatile memories

J. Zimmermann, C. Busseret, S. Ferraton, 2006, IEEE Transactions on Electron Devices.

Granular description of charging kinetics in silicon nanocrystals memories

J. Zimmermann, C. Busseret, Laurent Montès, 2006 .

Electronic properties of Ge nanocrystals for non volatile memory applications

Thierry Baron, C. Busseret, Abdelkader Souifi, 2006 .

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Thierry Baron, C. Busseret, Abdelkader Souifi, 2000 .