H. Tanigawa

发表

Experimental Evidence for Intrinsic Pinning Mechanism in Current-induced Domain Wall Motion

Shunsuke Fukami, Nobuyuki Ishiwata, Daichi Chiba, 2010 .

High-speed and reliable domain wall motion device: Material design for embedded memory and logic application

S. Fukami, S. Ikeda, N. Kasai, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2011 .

Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2012 .

Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets

S. Fukami, S. Ikeda, H. Ohno, 2013, 2013 Symposium on VLSI Technology.

Reduction of Threshold Current Density for Current-Driven Domain Wall Motion using Shape Control

H. Tanigawa, T. Ono, S. Kasai, 2005, cond-mat/0510619.

Tradeoff between low-power operation and thermal stability in magnetic domain-wall-motion devices driven by spin Hall torque

Tetsuhiro Suzuki, Kab-Jin Kim, Teruo Ono, 2014 .

Control of Multiple Magnetic Domain Walls by Current in a Co/Ni Nano-Wire

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2010 .

Current-Induced Magnetic Domain Wall Motion in Co/Ni Nanowire at Low Temperature

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2011 .

Effect of Joule heating in current-driven domain wall motion

H. Tanigawa, T. Ono, A. Yamaguchi, 2005 .