L. Raymond

3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

M. Lannoo, Marco G. Pala, M. Bescond, 2009, Microelectron. J..

Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors

Fabienne Michelini, Marc Bescond, L. Raymond, 2010 .

Resistance of one-dimensional quasicrystals

L. Raymond, L. Raymond, B. Iochum, 1992 .

Structure factor of 1D systems (superlattices) based on two-letter substitution rules. I. delta (Bragg) peaks

Bruno Iochum, L. Raymond, M. Kolár, 1993 .

Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

A. Asenov, N. Cavassilas, L. Raymond, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..