M. Tai

Non-Melting Phase Change Memory – Topological-Switching RAM (TRAM)

Takahiro Morikawa, Takasumi Ohyanagi, Masahito Kitamura, 2014 .

1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films

M. Tai, T. Morikawa, K. Akita, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

A 4F2-cross-point phase change memory using nano-crystalline doped GeSbTe material

M. Tai, Norikatsu Takaura, K. Akita, 2015 .

Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations

T. Yamamoto, M. Tai, K. Kamiya, 2013, 2013 IEEE International Electron Devices Meeting.

Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput

Y. Sasago, T. Mine, M. Tai, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications

T. Yamamoto, M. Tai, K. Kamiya, 2013, 2013 Symposium on VLSI Technology.

A low power phase change memory using low thermal conductive doped-Ge2Sb2Te 5 with nano-crystalline structure

M. Tai, T. Morikawa, N. Takaura, 2012, 2012 International Electron Devices Meeting.