C. S. Oh

发表

Analysis of Diffusion Bonded Parts Using Immersed UT Method

Young-H. Kim, Jeong-Pyo Kim, Jong-Seo Park, 1992 .

Co-Doping Characteristics of Si and Zn with Mg in P-Type GaN

Gye Mo Yang, C. S. Oh, C. J. Youn, 1999 .

Co-doping Characteristics of Si and Zn with Mg in P-type GaN

Gye Mo Yang, C. S. Oh, C. J. Youn, 2000 .

Thermal distributions of surface states causing the current collapse in unpassivated AlGaN∕GaN heterostructure field-effect transistors

C. S. Oh, C. J. Youn, J. W. Yang, 2005 .

AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator

C. S. Oh, C. Youn, J. Yang, 2004 .

Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film

C. S. Oh, Y. J. Park, T. Yeom, 2004 .

Comparative analysis of characteristics of Si, Mg, and undoped GaN

C. S. Oh, W. Lee, E. Suh, 2000 .

Allowable Substrate Bias for the Etching of n‐GaN in Photo‐Enhanced Electrochemical Etching

C. S. Oh, J. Yang, G. Yang, 2001 .

Bias-assisted photoelectrochemical oxidation of n-GaN in H2O

C. S. Oh, J. Yang, J. Seo, 2002 .

GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

C. S. Oh, J. Yang, S. Jeon, 2002 .

Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers

C. S. Oh, M. G. Cheong, E. Suh, 2000 .

UV-Assisted Electrochemical Oxidation of GaN

C. S. Oh, C. Youn, J. Yang, 2002 .

Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate

C. S. Oh, A. Yoshikawa, G. Yang, 1999 .