H. Lim

发表

High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array

Wei Zhang, Manijeh Razeghi, S. Tsao, 2007, SPIE Microtechnologies.

Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

Meimei Z. Tidrow, Manijeh Razeghi, Gail J. Brown, 2004 .

High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

Meimei Z. Tidrow, Manijeh Razeghi, Gail J. Brown, 2004 .

High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

Wei Zhang, Manijeh Razeghi, S. Tsao, 2007 .

High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

Wei Zhang, Manijeh Razeghi, A. A. Quivy, 2006 .

Quantum dot infrared photodetectors: Comparison of experiment and theory

Wei Zhang, Manijeh Razeghi, Kan Mi, 2005 .

High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition

Wei Zhang, Manijeh Razeghi, Maho Taguchi, 2005 .

High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector

Wei Zhang, Manijeh Razeghi, S. Tsao, 2007 .