Martin Florovič

Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

Miroslav Mikolášek, Ivan Novotný, Jaroslava Škriniarová, 2017 .

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Jean-Claude Jacquet, Jaroslav Kováč, Aleš Chvála, 2018 .

Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications

Jarosław Serafińczuk, Jaroslav Kováč, Marek Tłaczała, 2013, Electron Technology Conference.

Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress

Peter Benko, Jaroslava Škriniarová, Jaroslav Kováč, 2014 .

Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

Daniel Donoval, Jaroslav Kováč, Miroslav Mikolášek, 2014, Photonics Europe.