D. C. Mayer

发表

Application of hardness-by-design methodology to radiation-tolerant ASIC technologies

R. Koga, J. V. Osborn, R. C. Lacoe, 2000 .

Total-dose tolerance of the commercial Taiwan Semiconductor Manufacturing Company (TSMC) 0.35-/spl mu/m CMOS process

J. V. Osborn, R. C. Lacoe, S. Brown, 2001, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).

Total-dose radiation tolerance of a commercial 0.35 /spl mu/m CMOS process

J. V. Osborn, R. C. Lacoe, S. Brown, 1998, 1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385).

Determination of back interface state distribution in fully-depleted SOI MOSFETs

R. C. Cole, D. C. Mayer, G. P. Pollack, 1991, 1991 IEEE International SOI Conference Proceedings.

Observation of single event upsets in analog microcircuits

Stephen LaLumondiere, Steven C. Moss, K. B. Crawford, 1993 .

Report of the Odyssey FPGA Independent Assessment Team

Richard B. Katz, Rod Barto, John H. Day, 2001 .

Total-dose tolerance of a chartered semiconductor 0.35-/spl mu/m CMOS process

J. V. Osborn, R. C. Lacoe, S. Brown, 1999, 1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463).

Modes of operation and radiation sensitivity of ultrathin SOI transistors

D. C. Mayer, 1990 .

Total dose hardness of three commercial CMOS microelectronics foundries

J. V. Osborn, D. C. Mayer, R. Lacoe, 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

Total dose hardness of three commercial CMOS microelectronics foundries

J. V. Osborn, D. C. Mayer, R. Lacoe, 1997 .

Moderated degradation enhancement of lateral pnp transistors due to measurement bias

R. L. Pease, Kenneth F. Galloway, Ronald D. Schrimpf, 1998 .

Space charge limited degradation of bipolar oxides at low electric fields

Kenneth F. Galloway, Ronald D. Schrimpf, Daniel M. Fleetwood, 1998 .

Implications of radiation-induced dopant deactivation for npn bipolar junction transistors

Marty R. Shaneyfelt, P. S. Winokur, J. R. Schwank, 2000 .

Total-dose tolerance of the commercial American Microsystems Inc. (AMI) 0.35-/spl mu/m CMOS process

J. V. Osborn, R. C. Lacoe, D. C. Mayer, 2001, RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605).

Neutron and proton irradiation for latchup suppression in a radiation-tolerant commercial submicron CMOS process

J. V. Osborn, D. C. Mayer, S. Moss, 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

Modes of operation and radiation sensitivity of ultrathin SOI transistors

D. C. Mayer, 1989, IEEE SOS/SOI Technology Conference.

Single ion induced multiple-bit upset in IDT 256K SRAMs

R. Koga, W. A. Kolasinski, K. B. Crawford, 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures

Stephen LaLumondiere, R. Koga, Steven C. Moss, 2002 .

Field Dependent Dopant Deactivation in Bipolar Devices at Elevated irradiation Temperatures

D. C. Mayer, P. Winokur, J. Schwank, 2000 .

Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

R. L. Pease, Kenneth F. Galloway, John S. Suehle, 1997 .

Issues in fabricating electron devices with submicrometer dimensions

R. C. Henderson, D. C. Mayer, J. Nash, 1979 .

A short-channel CMOS/SOS technology in recrystallized 0.3-µm-thick silicon-on-sapphire films

R. C. Henderson, J.Y. Lee, D. C. Mayer, 1984, IEEE Electron Device Letters.

High-performance CMOS/SOS circuits in SPEAR material

D. C. Mayer, K. D. Miller, A. Kramer, 1990 .