N. Bouadma

Very efficient ultra-short bends on 2D photonic-crystal waveguide on InP substrate

A. Talneau, L. Le Gouezigou, N. Bouadma, 2001, Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551).

Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm

A. Talneau, M. Allovon, N. Bouadma, 1999, IEEE Photonics Technology Letters.

Dual-wavelength (GaAl)As laser

Jean-Claude Bouley, N. Bouadma, J. Riou, 1982 .

Fabrication and characteristics of ion beam etched cavity InP/InGaAsP BH lasers

M. Carre, N. Bouadma, J. Charil, 1987 .

1.3 /spl mu/m InGaP/InAsP MQW lasers with large spot-size and low loss fibre chip coupling fabricated by a standard buried heterostructure process

C. Kazmierski, N. Bouadma, M. Kamoun, 1996 .

Accurate wavelength spacing from absorption-coupled DFB laser arrays

A. Talneau, S. Hansmann, N. Bouadma, 1997, IEEE Photonics Technology Letters.

Photonic-crystal ultrashort bends with improved transmission and low reflection at 1.55 μm

Anne Talneau, Maria Kafesaki, Costas M. Soukoulis, 2002 .

GaAs:GaAlAs ridge waveguide lasers and their monolithic integration using the ion beam etching process

F. Brillouet, P. Correc, N. Bouadma, 1989 .

Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors

N. Bouadma, J. Riou, A. Kampfer, 1985 .

1.3-/spl mu/m GaInAsP/InP buried-ridge-structure laser and its monolithic integration with photodetector using reactive ion beam etching

J. Semo, N. Bouadma, 1994 .