Lawrence A. Clevenger

发表

The move to 300-mm wafers : A prime time to consider reclaim

Florian Schnabel, Jeffrey P. Gambino, Lynne M. Gignac, 1998 .

Dual damascene aluminum for 1-Gbit DRAMs

Florian Schnabel, Jeffrey P. Gambino, Lynne M. Gignac, 1998 .

The C49 to C54 Phase Transformation in TiSi2 Thin Films

Randy W. Mann, Lawrence A. Clevenger, R. Mann, 1994 .

Kinetic analysis of C49‐TiSi2 and C54‐TiSi2 formation at rapid thermal annealing rates

Randy W. Mann, Lawrence A. Clevenger, C. Nobili, 1992 .

Investigation of titanium silicide formation in Ti+Si reactions using infrared spectroscopy and x‐ray diffraction

Lawrence A. Clevenger, Katherine L. Saenger, C. Cabral, 1995 .

The C49 to C54-TiSi2 transformation in self-aligned silicide applications

Randy W. Mann, Q. Z. Hong, Lawrence A. Clevenger, 1993 .

Light Scattering Measurement Of Surface Topography During Formation Of Titanium Silicide.

Lawrence A. Clevenger, C. Lavoie, Katherine L. Saenger, 1995 .

Compressive Stress Increase With Repeated Thermal Cycling in Tantalum(Oxygen) Thin Films

Lawrence A. Clevenger, R. G. Schad, Cyril Cabral, 1993 .

In situ x‐ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines

G. Morales, Lawrence A. Clevenger, Karl F. Ludwig, 1995 .

Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

Randy W. Mann, T. A. Knotts, Lawrence A. Clevenger, 1995 .

Temperature dependence of the Al-fill processes for submicron-via structures

Roy C. Iggulden, Lawrence A. Clevenger, Darryl D. Restaino, 1998 .

Interdiffusion and phase formation in Cu(Sn) alloy films

Evan G. Colgan, T. A. Gallo, Lawrence A. Clevenger, 1998 .

Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies

R. Augur, G. Ribes, G. Biery, 2012 .

In Situ Analysis of the Formation of thin TISI 2 , (g50 nm) Contacts in Submicron Cmos Structures during Rapid Thermal Annealing

G. Morales, Lawrence A. Clevenger, C. Lavoie, 1995 .