Victor M. Ustinov

发表

Epitaxial growth of quantum-dot heterostructures on metamorphic buffers

Alexey E. Zhukov, Alexey Vasilyev, Elizaveta Semenova, 2005, Other Conferences.

Investigation of the formation of InAs QDs in a AlGaAs matrix

Victor M. Ustinov, D. S. Sizov, N. V. Kryzhanovskaya, 2003, Saratov Fall Meeting.

Recent advances in long-wavelength GaAs-based quantum dot lasers

Nikolai N. Ledentsov, Alexey E. Zhukov, Mikhail V. Maximov, 2003, SPIE OPTO.

Exciton structure of absorption and magneto-absorption spectra near type I-type II transition in the strained heterostructures

Victor M. Ustinov, Alexey I. Nesvizhskii, Alexey Kavokin, 1995, Other Conferences.

Mode locking of InGaAs quantum dot lasers

Nikolai N. Ledentsov, Alexey E. Zhukov, Victor M. Ustinov, 2004, SPIE Photonics Europe.

MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2003, Saratov Fall Meeting.

Semiconductor quantum dot lasers

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2005, Other Conferences.

Superlattice detector as a fast direct detector and autocorrelator for terahertz radiation

Alexey E. Zhukov, Victor M. Ustinov, Ekkehard Schomburg, 1999, Optics & Photonics.

Mid-infrared properties of quantum dot lasers

Alexey E. Zhukov, Victor M. Ustinov, Dieter Bimberg, 2001, International Symposium on Photonics and Applications.

Quantum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloys

Victor M. Ustinov, Alexey R. Kovsh, Alexander M. Mintairov, 2003, Saratov Fall Meeting.

Measurement of resonant-mode blueshifts in quantum-dot vertical-cavity surface-emitting lasers

Nikolai N. Ledentsov, Victor M. Ustinov, John P. Loehr, 1998, Other Conferences.

Formation specifity of InAs/GaAs submonolayer superlattice

Alexey E. Zhukov, Victor M. Ustinov, N. D. Zakharov, 2003, Saratov Fall Meeting.

Damping and feedback characteristics of quantum dot semiconductor lasers

Olwen Carroll, Guillaume Huyet, Alexey E. Zhukov, 2004, SPIE Photonics Europe.

GaAs nanowhiskers grown by molecular beam epitaxy on GaAs(111)B surface activated by Au: theory and experiment

Victor M. Ustinov, Alexander A. Tonkikh, Vladimir G. Dubrovskii, 2005, Other Conferences.

High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile

Victor M. Ustinov, Richard V. Penty, Ian H. White, 2004, SPIE OPTO.

High-power long-wavelength lasers using GaAs-based quantum dots

Victor M. Ustinov, Nikolai Ledentsov, James A. Lott, 2001, SPIE OPTO.

1.3-μm edge- and surface-emitting quantum dot lasers grown on GaAs substrates

Nikolai N. Ledentsov, Alexey E. Zhukov, Mikhail V. Maximov, 2002, SPIE OPTO.

The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

Victor M. Ustinov, D. S. Sizov, N. V. Kryzhanovskaya, 2002, Saratov Fall Meeting.

Pecularities of recombination processes in injection lasers based on (In,Ga)As quantum dots leading to the single longitudinal mode operation at room temperature

Nikolai N. Ledentsov, Alexey E. Zhukov, Victor M. Ustinov, 1995, Other Conferences.

Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots

Alexey E. Zhukov, Victor M. Ustinov, Yu G. Musikhin, 2003, Saratov Fall Meeting.

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2002, Saratov Fall Meeting.

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

Nikolai N. Ledentsov, Alexey E. Zhukov, Mikhail V. Maximov, 2004, SPIE OPTO.

Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells

D. Pal, Alexey E. Zhukov, Victor M. Ustinov, 2003, Saratov Fall Meeting.

High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range

Alexey E. Zhukov, Victor M. Ustinov, Nikolai Ledentsov, 2003, SPIE OPTO.

Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser

Nikolai N. Ledentsov, Alexey E. Zhukov, Victor M. Ustinov, 1997 .

InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy

Victor M. Ustinov, Anton Yu. Egorov, Natalya V. Kryzhanovskaya, 2003 .

Prevention of gain saturation by multi-layer quantum dot lasers

Nikolai N. Ledentsov, Mikhail V. Maximov, Victor M. Ustinov, 1996 .

Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics

Nikolai N. Ledentsov, Victor M. Ustinov, James A. Lott, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Reduced sensitivity to external optical feedback in quantum dot lasers

Guillaume Huyet, Victor M. Ustinov, Dieter Bimberg, 2003 .

Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics

Nikolai N. Ledentsov, Victor M. Ustinov, James A. Lott, 2002 .

GaAs-based long-wavelength lasers

Alexey E. Zhukov, Victor M. Ustinov, A. Zhukov, 2000 .

Quantum dot vertical-cavity surface-emitting lasers

Alexey E. Zhukov, Victor M. Ustinov, Nikolai A. Maleev, 2003 .

InGaAs-GaAs quantum-dot lasers

Nikolai N. Ledentsov, Victor M. Ustinov, Dieter Bimberg, 1997 .