G. Kissinger

Void-free silicon-wafer-bond strengthening in the 200–400 °C range

G. Kissinger, W. Kissinger, G. Kissinger, 1993 .

Low Cost, 50 GHz Fmax Si/SiGe Heterojunction Bipolar Transistor Technology with Epi-Free Collector Wells

D. Knoll, B. Tillack, R. Barth, 1998, 28th European Solid-State Device Research Conference.

Defects in AS-Grown Silicon and their Evolution During Heat Treatments

H. Bender, Jan Vanhellemont, G. Kissinger, 1997 .

Load induced stresses and plastic deformation in 450mm silicon wafers

A. Fischer, G. Kissinger, A. Fischer, 2007 .