Changhwan Shin

发表

Latent Class Modeling for Nested Data : Introduction to Multilevel Latent Class Model

Jungkyu Park, Changhwan Shin, 2020 .

A compact effective-current model for power performance analysis on state-of-the-art technology development and benchmarking

Sangheon Oh, Changhwan Shin, Wookhyun Kwon, 2015 .

Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method

Sangheon Oh, Changhwan Shin, 2016, IEICE Trans. Electron..

Analysis of Random Variations and Variation-Robust Advanced Device Structures

Hyohyun Nam, Changhwan Shin, Gyo Sub Lee, 2014 .

Comparative Study of Negative Differential Capacitance in Ferroelectric Capacitors: P(VDF0.75-TrFE0.25) and P(VDF0.50-TrFE0.50)

Changhwan Shin, Hansol Ku, 2018 .

Tri-gate bulk CMOS technology for improved SRAM scalability

Borivoje Nikolic, Changhwan Shin, Tsu-Jae King Liu, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Introduction: Barriers Preventing CMOS Device Technology from Moving Forward

Changhwan Shin, 2016 .

Layout engineering to suppress hysteresis of negative capacitance FinFET

Changhwan Shin, Bich-Yen Nguyen, Eunah Ko, 2017, 2017 IEEE International Conference on IC Design and Technology (ICICDT).

Impact of the double-patterning technique on the LER-induced threshold voltage variation in symmetric tunnel field-effect transistor

Ju Han Lee, Changhwan Shin, Seulki Park, 2015, IEICE Electron. Express.

SRAM yield and performance enhancements with tri-gate bulk MOSFETs

Tsu-Jae King Liu, Changhwan Shin, A. Carlson, 2008, 2008 IEEE Silicon Nanoelectronics Workshop.

Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance

Changhwan Shin, Jaesung Jo, Karam Cho, 2016, IEICE Trans. Electron..

Effect of double-patterning and double-etching on the line-edge-roughness of multi-gate bulk MOSFETs

Changhwan Shin, In Jun Park, 2013, IEICE Electron. Express.

Experimental demonstration of a ferroelectric FET using paper substrate

Seung-Hyun Kim, Shun'ichiro Ohmi, Yun Jeong Hwang, 2014, IEICE Electron. Express.

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

Xin Sun, Tsu-Jae King Liu, Changhwan Shin, 2008, IEEE Electron Device Letters.

Full 3D Simulation of 6T-SRAM Cells for the 22nm Node

Xin Sun, Tsu-Jae King Liu, Changhwan Shin, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Worst Case Sampling Method to Estimate the Impact of Random Variation on Static Random Access Memory

Changhwan Shin, Gyo Sub Lee, 2015, IEEE Transactions on Electron Devices.

SRAM design in fully-depleted SOI technology

Xin Sun, Borivoje Nikolic, Tsu-Jae King Liu, 2010, Proceedings of 2010 IEEE International Symposium on Circuits and Systems.

Assistive Circuit for Lowering Minimum Operating Voltage and Balancing Read/Write Margins in an SRAM Array

Changhwan Shin, 2014 .

Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application

Hyungcheol Shin, Changhwan Shin, Dyukyoung Moon, 2014, IEICE Electron. Express.

Worst Case Sampling Method with Confidence Ellipse for Estimating the Impact of Random Variation on Static Random Access Memory (SRAM)

Sangheon Oh, Jung-Dong Park, Changhwan Shin, 2015 .

Comparative Study of Negative Capacitance in Ferroelectric Capacitors : P(VDF0.75-TrFE0.25) Versus Pb(Zr, Ti)O₃

Changhwan Shin, Hansol Ku, 2018 .

Tapered Coating for Nano-electro-mechanical (NEM) Relay to Improve Energy-delay Product

Changhwan Shin, Kihun Choe, 2018 .

Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO 2 or SiO 2 Trench Isolation

Hyohyun Nam, Changhwan Shin, Seulki Park, 2014 .

Quasi-Planar Tri-gate (QPT) bulk CMOS technology for single-port SRAM application

Hidehiro Fujiwara, Koji Nii, Tsu-Jae King Liu, 2012, Thirteenth International Symposium on Quality Electronic Design (ISQED).

State-of-the-art silicon device miniaturization technology and its challenges

Changhwan Shin, 2014, IEICE Electron. Express.

Applications in Static Random Access Memory (SRAM)

Changhwan Shin, 2016 .

Performance and Area Scaling Benefits of FD-SOI Technology for 6-T SRAM Cells at the 22-nm Node

Tsu-Jae King Liu, Changhwan Shin, Yasumasa Tsukamoto, 2010, IEEE Transactions on Electron Devices.

Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage

Changhwan Shin, Wookhyun Kwon, In Jun Park, 2015 .

Quasi-planar bulk CMOS technology for improved SRAM scalability

Borivoje Nikolic, Tsu-Jae King Liu, Changhwan Shin, 2011 .

Comparative study in work-function variation: Gaussian vs. Rayleigh distribution for grain size

Hyohyun Nam, Changhwan Shin, 2013, IEICE Electron. Express.

Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET

Changhwan Shin, Jaehyuk Lim, C. Shin, 2020, IEEE Access.

Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER)

Changhwan Shin, Taesup Moon, Jihwan Kwak, 2021, Electronics.

Performance analysis and yield estimation for a negative capacitance field effect transistor-based eight-transistor static random access memory

Changhwan Shin, Yuri Hong, Changwoo Han, 2021, Semiconductor Science and Technology.

FBFET (feedback field-effect transistor)-based oscillator for neuromorphic computing

Changhwan Shin, Changhoon Lee, 2021 .

Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET

Changhwan Shin, Jaehyuk Lim, Jinwoong Lee, 2021, IEEE Access.

Design Optimization of Multigate Bulk MOSFETs

Changhwan Shin, Byron Ho, Xin Sun, 2013, IEEE Transactions on Electron Devices.

Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET Performance

Sung Hwan Kim, Changhwan Shin, Nattapol Damrongplasit, 2013, IEEE Transactions on Nanotechnology.

Ultra-thick semi-crystalline photoactive donor polymer for efficient indoor organic photovoltaics

Changhwan Shin, Han Young Woo, Jin-Hyuk Bae, 2019, Nano Energy.

A New Slit-Type Vacuum-Channel Transistor

Changhwan Shin, Seok-Gy Jeon, C. Shin, 2014, IEEE Transactions on Electron Devices.

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Changhwan Shin, Eunah Ko, C. Shin, 2018, Nano Convergence.

Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers

Jung-Dong Park, Changhwan Shin, Hyunjae Lee, 2016, IEEE Transactions on Electron Devices.

Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

Krishna C. Saraswat, Changhwan Shin, Byung Jin Cho, 2015, IEEE Electron Device Letters.

SRAM yield enhancement with thin-BOX FD-SOI

Borivoje Nikolic, Changhwan Shin, Yasumasa Tsukamoto, 2009, 2009 IEEE International SOI Conference.

Impact of temperature on negative capacitance field-effect transistor

Changhwan Shin, Jaesung Jo, C. Shin, 2015 .

SRAM cell design considerations for SOI technology

Borivoje Nikolic, Changhwan Shin, Bich-Yen Nguyen, 2009, 2009 IEEE International SOI Conference.

Study of High-$k$/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept

Hyohyun Nam, Changhwan Shin, C. Shin, 2013, IEEE Electron Device Letters.

Convex Channel Design for Improved Capacitorless DRAM Retention Time

Changhwan Shin, Min Hee Cho, Tsu-Jae King Liu, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Impact of Equivalent Oxide Thickness on Threshold Voltage Variation Induced by Work-Function Variation in Multigate Devices

Changhwan Shin, C. Shin, Youngtaek Lee, 2017, IEEE Transactions on Electron Devices.

Experimental observation of voltage amplification using negative capacitance for sub-60 mV/decade CMOS devices

Changhwan Shin, Jaesung Jo, C. Shin, 2015 .

Performance and Yield Benefits of Quasi-Planar Bulk CMOS Technology for 6-T SRAM at the 22-nm Node

Changhwan Shin, Xin Sun, Tsu-Jae King Liu, 2011, IEEE Transactions on Electron Devices.

Impact of Current Flow Shape in Tapered (Versus Rectangular) FinFET on Threshold Voltage Variation Induced by Work-Function Variation

Hyohyun Nam, Changhwan Shin, C. Shin, 2014, IEEE Transactions on Electron Devices.

Monte Carlo Simulation Study: the effects of double- patterning versus single-patterning on the line-edge- roughness (LER) in FDSOI Tri-gate MOSFETs

Changhwan Shin, In Jun Park, 2013 .

Computing-Inexpensive Matrix Model for Estimating the Threshold Voltage Variation by Workfunction Variation in High-κ/Metal-gate MOSFETs

Changhwan Shin, Gyo Sub Lee, 2014 .

Performance analysis and optimization for silicon interposer with Through Silicon Via (TSV)

Changhwan Shin, Namhoon Kim, D. Wu, 2012, 2012 IEEE International SOI Conference (SOI).

Variation-Aware Advanced CMOS Devices and SRAM

Changhwan Shin, C. Shin, 2016 .

Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

Sung Hwan Kim, Changhwan Shin, T. Liu, 2011, IEEE Transactions on Electron Devices.

Current-Voltage Model for Negative Capacitance Field-Effect Transistors

Changhwan Shin, Youngki Yoon, Hyunjae Lee, 2017, IEEE Electron Device Letters.

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits.

Dong-Ho Kang, Changhwan Shin, Seunghwan Seo, 2019, Nanoscale.

Study of High-k/Metal-Gate Work-Function Variation Using Rayleigh Distribution

Hyohyun Nam, Changhwan Shin, C. Shin, 2013, IEEE Electron Device Letters.

Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

Changhwan Shin, Xin Sun, T. Liu, 2009, IEEE Transactions on Electron Devices.

Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

Changhwan Shin, V. Moroz, Xin Sun, 2011, IEEE Transactions on Electron Devices.

Study of Work-Function Variation in High- $\kappa $ /Metal-Gate Gate-All-Around Nanowire MOSFET

Hyohyun Nam, Jung-Dong Park, Changhwan Shin, 2016, IEEE Transactions on Electron Devices.

Tri-gate bulk MOSFET design for improved robustness to random dopant fluctuations

Changhwan Shin, A. Carlson, Xin Sun, 2008, 2008 IEEE Silicon Nanoelectronics Workshop.