Joerg Schulze

Influence of Silicon Body Thickness of Vertical Silicon on Nothing (SON) MOSFET with Nitride Nate Dielectric on Electrical Characteristics

Tomislav Suligoj, Ignaz Eisele, Petar Biljanović, 2006 .

Dopant diffusion during rapid thermal oxidation

Walter Hansch, Ignaz Eisele, C Fink, 2000 .

Phonon assisted tunneling in gated p-i-n diodes

Walter Hansch, Ignaz Eisele, C Fink, 2002 .

Insulated Gate Bipolar Transistors based on Pure Boron Collectors

Ahmed Elsayed, Joerg Schulze, Jan Frederik Dick, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

MBE-grown vertical power-MOSFETs with 100-nm channel length

Walter Hansch, Ignaz Eisele, C Fink, 2000 .

The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium

Walter Hansch, Ignaz Eisele, C Fink, 2000 .

Electrically pumped lasing from Ge Fabry-Perot resonators on Si.

Erich Kasper, Marc Schmid, Michael Oehme, 2015, Optics express.

Franz-Keldysh Effect in GeSn Detectors

Erich Kasper, Marc Schmid, Michael Oehme, 2014 .