Thomas P. Duffey

Feasibility of highly line-narrowed F2 laser for 157-nm microlithography

William N. Partlo, Eckehard D. Onkels, Richard L. Sandstrom, 2000, Advanced Lithography.

ArF lasers for production of semiconductor devices with CD<0.15 μm

Toshihiko Ishihara, William N. Partlo, Richard L. Sandstrom, 1998, Advanced Lithography.

Dependence of compaction in fused silica on laser pulsewidth at 248 nm (Abstract Only)

Richard L. Sandstrom, Thomas P. Duffey, Richard G. Morton, 1999, Laser Damage.