Barry P. Linder

发表

Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements

Franco Stellari, Keith A. Jenkins, Alan J. Weger, 2015, 2015 IEEE International Reliability Physics Symposium.

Electromigration characteristics of power grid like structures

Barry P. Linder, Cathryn Christiansen, Baozhen Li, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Estimating transistor channel temperature using time-resolved and time-integrated NIR emission

Franco Stellari, Keith A. Jenkins, Alan J. Weger, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Dependence of Post-Breakdown Conduction on Gate Oxide Thickness

Barry P. Linder, James H. Stathis, Salvatore Lombardo, 2002, Microelectron. Reliab..

Threshold in the degradation rate during breakdown transients of ultra-thin gate oxides

Barry P. Linder, Salvatore Lombardo, James H. Stathis, 2003 .

Influence and model of gate oxide breakdown on CMOS inverters

Rajiv V. Joshi, Barry P. Linder, Ching-Te Chuang, 2003, Microelectron. Reliab..

Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery

Barry P. Linder, James H. Stathis, Giuseppe La Rosa, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Separating NBTI and PBTI effects on the degradation of Ring Oscillator frequency

Barry P. Linder, Jae-Joon Kim, Aditya Bansal, 2011, 2011 IEEE International Integrated Reliability Workshop Final Report.

Analysis of the effect of the gate oxide breakdown on SRAM stability

Rajiv V. Joshi, Barry P. Linder, Gregory A. Northrop, 2002, Microelectron. Reliab..

A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)

Barry P. Linder, Kai Zhao, James H. Stathis, 2015, 2015 IEEE International Reliability Physics Symposium.

Transient self-heating modeling and simulations of back-end-of-line interconnects

Barry P. Linder, Baozhen Li, Andrew Kim, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Reliability of ultra-thin oxides in CMOS circuits

Barry P. Linder, Rosana Rodríguez, James H. Stathis, 2003, Microelectron. Reliab..

Combined Ramp Voltage Stress and Constant Voltage Stress for optimal BTI voltage acceleration and lifetime modeling

Barry P. Linder, Takashi Ando, B. Linder, 2014, 2014 IEEE International Reliability Physics Symposium.

Circuit implications of gate oxide breakdown

Barry P. Linder, James H. Stathis, Rosana Rodríguez, 2003, Microelectron. Reliab..

Analyzing path delays for accelerated testing of logic chips

Kevin G. Stawiasz, Alan J. Weger, Barry P. Linder, 2015, 2015 IEEE International Reliability Physics Symposium.

Improving and optimizing reliability in future technologies with high-κ dielectrics

Barry P. Linder, S. Krishnan, Ernest Y. Wu, 2013, 2013 International Symposium onVLSI Design, Automation, and Test (VLSI-DAT).

Performance Degradation Analysis and Hot-Carrier Injection Impact on the Lifetime Prediction of $LC$ Voltage Control Oscillator

Keith A. Jenkins, Barry P. Linder, Peilin Song, 2015, IEEE Transactions on Electron Devices.

Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs

Barry P. Linder, Miaomiao Wang, Ruqiang Bao, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Statistics of progressive breakdown in ultra-thin Oxides

Barry P. Linder, James H. Stathis, J. Stathis, 2004 .

The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability

Barry P. Linder, James H. Stathis, Andreas Kerber, 2009, 2009 IEEE International Reliability Physics Symposium.

Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission

Franco Stellari, Keith A. Jenkins, Alan J. Weger, 2016, IEEE Transactions on Electron Devices.

Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies

Barry P. Linder, Ching-Te Chuang, Chris H. Kim, 2011, 2011 International Reliability Physics Symposium.

Effect and model of gate Oxide breakdown on CMOS inverters

Barry P. Linder, James H. Stathis, Rosana Rodríguez, 2004 .

Materials and Electrical Characterization of Physical Vapor Deposited LaxLu1-xO3 Thin Films on 300 mm Silicon

Barry P. Linder, Andrew J. Kellock, Sanjay Shinde, 2011 .

Calculating the error in long term oxide reliability estimates

Barry P. Linder, David J. Frank, James H. Stathis, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

PBTI/NBTI monitoring ring oscillator circuits with on-chip Vt characterization and high frequency AC stress capability

Barry P. Linder, Rahul M. Rao, Amlan Ghosh, 2011, 2011 Symposium on VLSI Circuits - Digest of Technical Papers.

Growth and scaling of oxide conduction after breakdown

Barry P. Linder, David J. Frank, James H. Stathis, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

NBTI and PBTI in HKMG

Barry P. Linder, James H. Stathis, Siddarth A. Krishnan, 2014 .

Modeling of oxide charging effects in plasma processing

Barry P. Linder, Nathan W. Cheung, William G. En, 1996 .

On the location and magnitude of trapped charge in poly- Si ALD-Al2O3 capped Hf-silicate gate stacks

Barry P. Linder, Martin M. Frank, Eduard A. Cartier, 2005 .

Process optimizations for NBTI/PBTI for future replacement metal gate technologies

Barry P. Linder, T. Ando, M. Wang, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).