Allen H. Gabor

发表

Line-edge roughness performance targets for EUV lithography

Lei Sun, Timothy A. Brunner, Chris A. Mack, 2017, Advanced Lithography.

Dissolution properties of cycloolefin-maleic-anhydride-based resist resins

Elsa Reichmanis, Allen H. Gabor, Omkaram Nalamasu, 2000, Advanced Lithography.

Improving the power-performance of multicore processors through optimization of lithography and thermal processing

Scott J. Bukofsky, Allen H. Gabor, Arpan P. Mahorowala, 2007, SPIE Advanced Lithography.

Overlay improvement roadmap: strategies for scanner control and product disposition for 5-nm overlay

Nelson Felix, Scott Halle, Allen H. Gabor, 2011, Advanced Lithography.

The GridMapper challenge: how to integrate into manufacturing for reduced overlay error

Allen H. Gabor, Michael Pike, Timothy J. Wiltshire, 2010, Advanced Lithography.

193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids

John J. Biafore, Sydney G. Slater, Elsa Reichmanis, 1998, Advanced Lithography.

Determining DOF requirements needed to meet technology process assumptions

Timothy A. Brunner, Allen H. Gabor, Shailendra Mishra, 2008, SPIE Advanced Lithography.

Measuring layer-specific depth-of-focus requirements

Allen H. Gabor, John M. Cotte, Colin J. Brodsky, 2008, SPIE Advanced Lithography.

Characterization of linewidth variation on 248- and 193-nm exposure tools

Lars W. Liebmann, Peter Talvi, Richard A. Ferguson, 2001, SPIE Advanced Lithography.

Double exposure double etch for dense SRAM: a designer's dream

Scott Halle, Allen H. Gabor, Klaus Herold, 2008, SPIE Advanced Lithography.

Subresolution assist feature implementation for high-performance logic gate-level lithography

Ronald L. Gordon, Lars W. Liebmann, Carlos Fonseca, 2002, SPIE Advanced Lithography.

Sidewall imaging transfer process with several critical dimensions

Allen H. Gabor, Sean D. Burns, Sudharshanan Raghunathan, 2012 .

Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Andrew J. Blakeney, Allen H. Gabor, Daniel Miller, 1998, Advanced Lithography.

Silicon containing polymer in applications for 193 nm high NA lithography processes

Karen Petrillo, Allen H. Gabor, Naftali E. Lustig, 2006, SPIE Advanced Lithography.

Edge placement error fundamentals and impact of EUV: will traditional design-rule calculations work in the era of EUV?

Harry J. Levinson, Timothy A. Brunner, Xuemei Chen, 2018 .

High-NA swing curve effects

Timothy A. Brunner, Allen H. Gabor, ChungHsi J. Wu, 2001, SPIE Advanced Lithography.

Hydrosiloxane-modified styrene-diene block copolymer resists

Guoping Mao, R. C. Tiberio, Christopher K. Ober, 1993, Advanced Lithography.

Meeting critical gate linewidth control needs at the 65 nm node

Scott Halle, Allen H. Gabor, Donald J. Samuels, 2006, SPIE Advanced Lithography.

Enabling the 70nm technology node with 193nm altPSM lithography

Fook-Luen Heng, Lars W. Liebmann, Carlos Fonseca, 2002 .

Overlay error statistics for multiple-exposure patterning

Nelson Felix, Allen H. Gabor, N. Felix, 2019, Journal of Micro/Nanolithography, MEMS, and MOEMS.

Overlay statistics for multiple exposure patterning

Allen H. Gabor, Nelson Felix, N. Felix, 2017, Advanced Lithography.

New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins

Sydney G. Slater, Elsa Reichmanis, Mark Neisser, 1999, Advanced Lithography.

Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development

Christopher K. Ober, Allen H. Gabor, Robert D. Allen, 1996, Advanced Lithography.

Supercritical fluid processing: opportunities for new resist materials and processes

Christopher K. Ober, Allen H. Gabor, Paula M. Gallagher-Wetmore, 1996, Advanced Lithography.

Model study by FT-IR of the interaction of select cholate dissolution inhibitors with poly(norbornene-alt-maleic anhydride) and its derivatives

Elsa Reichmanis, Allen H. Gabor, Omkaram Nalamasu, 1999, Advanced Lithography.

Topography impacts on line-width control for gate level lithography

Scott Halle, Allen H. Gabor, Chidam Kallingal, 2005, SPIE Advanced Lithography.

Resist outgassing as a function of differing photoadditives

Roderick R. Kunz, Elsa Reichmanis, Allen H. Gabor, 1999, Advanced Lithography.

Enabling the 70-nm technology node with 193-nm altPSM lithography

Fook-Luen Heng, Lars W. Liebmann, Carlos Fonseca, 2002, SPIE Advanced Lithography.

Smaller, smarter, faster, and more accurate: the new overlay metrology

Nelson Felix, Allen H. Gabor, Christopher P. Ausschnitt, 2010, Advanced Lithography.

Imaging polymers with supercritical carbon dioxide

Allen H. Gabor, Paula M. Gallagher-Wetmore, Robert D. Allen, 1997 .

Fundamental Studies of the Effects of Photo-additive Structure on Resist Outgassing

Roderick R. Kunz, Elsa Reichmanis, Allen H. Gabor, 1999 .

Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging

Mosong Cheng, Ebo H. Croffie, Andrew R. Neureuther, 2000 .

Overview of the STORM program application to 193nm singe layer resists

Mosong Cheng, Ebo H. Croffie, Andrew R. Neureuther, 2000 .

Lithographic Materials Technologies: 193 nm Imaging and Beyond

Allen H. Gabor, M. J. Bowden, F. Houlihan, 1999 .

Photogenerators of Sulfamic Acids; Use in Chemically Amplified Single Layer Resists

Allen H. Gabor, F. Houlihan, J. Biafore, 1998 .

193 nm single layer resist strategies, concepts, and recent results

Allen H. Gabor, F. Houlihan, O. Nalamasu, 1998 .

From Process Assumptions to Development to Manufacturing

Allen H. Gabor, W. Landers, N. Lustig, 2008 .

Comparison of Several CU(I) and CU(II) Precursors for the Sol-Gel Preparation of High TC Superconducting Metal Oxides

Allen H. Gabor, W. Gladfelter, M. Mecartney, 1988 .

Synthesis and Lithographic Characterization of Block Copolymer Resists Consisting of Both Poly(styrene) Blocks and Hydrosiloxane-Modified Poly(diene) Blocks

Allen H. Gabor, C. Ober, G. Mao, 1994 .

Lithographic Properties of Poly(tert-butyl methacrylate)-Based Block and Random Copolymer Resists Designed for 193 nm Wavelength Exposure Tools

Allen H. Gabor, C. Ober, and Laura C. Pruette, 1996 .

Bayesian dropout approximation in deep learning neural networks: analysis of self-aligned quadruple patterning

Allen H. Gabor, M. Shephard, S. Halle, 2022 .