Hyeongnam Kim

Reverse bias lifetime reliability assessments of HV GaN power device

Hari Kannan, Alain Charles, Tim McDonald, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

Florin Udrea, Alain Charles, Giorgia Longobardi, 2018, Microelectron. Reliab..

Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors

Michael L. Schuette, Wu Lu, Hyeongnam Kim, 2011 .

Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing

Dongmin Liu, Wu Lu, Hyeongnam Kim, 2005 .

In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistors

Steven A. Ringel, Mantu K. Hudait, Dongmin Liu, 2006 .

Reverse bias lifetime analysis of 600V enhancement mode GaN devices

Hari Kannan, Alain Charles, Mohamed Imam, 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).