G.T. Sasse

Record RF performance of standard 90 nm CMOS technology

D.B.M. Klaassen, I.-S. Lim, L.F. Tiemeijer, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Gate-capacitance extraction from RF C-V measurements [MOS device applications]

R. de Kort, G.T. Sasse, J. Schmitz, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

C-V test structures for metal gate CMOS

J. Schmitz, G.T. Sasse, M.P.J. Tiggelman, 2006, 2006 IEEE International Conference on Microelectronic Test Structures.

Methodology for performing RF reliability experiments on a generic test structure

J. Schmitz, G.T. Sasse, R.J. de Vries, 2007, 2007 IEEE International Conference on Microelectronic Test Structures.

Charge pumping at radio frequencies [MOSFET device interface state density measurement]

J. Schmitz, G.T. Sasse, H. de Vries, 2005, Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005..