Carlos Fonseca

发表

High-performance circuit design for the RET-enabled 65-nm technology node

Lars W. Liebmann, Arnold Eugene Barish, Zachary Baum, 2004, SPIE Advanced Lithography.

Process-induced bias: a study of resist design and process implications

Carlos Fonseca, Takahisa Otsuka, Steven Scheer, 2008, SPIE Advanced Lithography.

Triggering bat detectors: automatic vs. manual mode

Carlos Fonseca, Milena Matos, Nuno Lopes Pinto, 2013 .

Considerations for pattern placement error correction toward 5nm node

Carlos Fonseca, Hidetami Yaegashi, Kenichi Oyama, 2017, Advanced Lithography.

Analyzing block placement errors in SADP patterning

Carlos Fonseca, Satoru Shimura, Shinji Kobayashi, 2016, SPIE Advanced Lithography.

Mastering double exposure process window aware OPC by means of virtual targets

Lars W. Liebmann, Zachary Baum, Carlos Fonseca, 2006, SPIE Photomask Technology.

Characterization of imaging performance for immersion lithography at NA=0.93

Carlos Fonseca, Peter Vanoppen, Ryan Deschner, 2006, SPIE Advanced Lithography.

Process-induced bias: a study of resist design, device node, illumination conditions, and process implications

Carlos Fonseca, Yoshihiro Kondo, Tsuyoshi Shibata, 2009, Advanced Lithography.

Advances and challenges in dual-tone development process optimization

Carlos Fonseca, Roel Gronheid, Mark Somervell, 2009, Advanced Lithography.

EUV secondary electron blur at the 22nm half pitch node

Carlos Fonseca, John J. Biafore, Roel Gronheid, 2011, Advanced Lithography.

Subresolution assist feature implementation for high-performance logic gate-level lithography

Ronald L. Gordon, Lars W. Liebmann, Carlos Fonseca, 2002, SPIE Advanced Lithography.

Methodology for generating exposure tool specifications for alternating phase-shift mask application for 70-nm node

Kafai Lai, Lars W. Liebmann, Carlos Fonseca, 2002, SPIE Advanced Lithography.

Pattern uniformity control in integrated structures

Carlos Fonseca, Satoru Shimura, Shinji Kobayashi, 2017, Advanced Lithography.

EUV local CDU healing performance and modeling capability towards 5nm node

Carlos Fonseca, David Rio, Hidetami Yaegashi, 2017, Photomask Technology.

Self-aligned block technology: a step toward further scaling

Carlos Fonseca, Chris Wilson, Julien Ryckaert, 2017, Advanced Lithography.

Understanding EUV resist dissolution characteristics and its impact to RLS limitations

Carlos Fonseca, Roel Gronheid, Gustaf Winroth, 2011, Advanced Lithography.

Enabling the 70nm technology node with 193nm altPSM lithography

Fook-Luen Heng, Lars W. Liebmann, Carlos Fonseca, 2002 .

Co-optimization of exposure dose and etch process for SAQP pitch walk control

Carlos Fonseca, Liesbeth Reijnen, Vadim Timoshkov, 2018, Advanced Lithography.

Finding the right way: DFM versus area efficiency for 65 nm gate layer lithography

Carlos Fonseca, Alan C. Thomas, Uwe Schroeder, 2006, SPIE Advanced Lithography.

Impact of resist blur on MEF, OPC, and CD control

Carlos Fonseca, Timothy A. Brunner, Nakgeuon Seong, 2004, SPIE Advanced Lithography.

Availability of underlayer application to EUV process

Carlos Fonseca, Hyun-Woo Kim, Cha-Won Koh, 2011, Advanced Lithography.

Advances in dual-tone development for pitch frequency doubling

Carlos Fonseca, Roel Gronheid, Mark Somervell, 2010, Advanced Lithography.

ACLV driven double-patterning decomposition with extensively added printing assist features (PrAFs)

Carlos Fonseca, Scott Halle, Jason Meiring, 2007, SPIE Advanced Lithography.

Layout optimization at the pinnacle of optical lithography

Lars W. Liebmann, Arnold Eugene Barish, Carlos Fonseca, 2003, SPIE Advanced Lithography.

Optimum tone for various feature types: positive versus negative

Carlos Fonseca, Timothy A. Brunner, C. Fonseca, 2001, SPIE Advanced Lithography.

EUV via hole pattern fidelity enhancement through novel resist and post-litho plasma treatment

Carlos Fonseca, Liesbeth Reijnen, Mu Feng, 2018, Advanced Lithography.

EUV resist requirements: absorbance and acid yield

Carlos Fonseca, Bruce W. Smith, C. Grant Willson, 2009, Advanced Lithography.

EPE improvement thru self-alignment via multi-color material integration

Jeffrey T. Smith, Akiteru Ko, Carlos Fonseca, 2017, Advanced Lithography.

Extraction and identification of resist modeling parameters for EUV lithography

Carlos Fonseca, Roel Gronheid, Steven Scheer, 2008, SPIE Advanced Lithography.

Enabling the 70-nm technology node with 193-nm altPSM lithography

Fook-Luen Heng, Lars W. Liebmann, Carlos Fonseca, 2002, SPIE Advanced Lithography.

Monte Carlo simulation of edge placement error

Carlos Fonseca, Satoru Shimura, Shinji Kobayashi, 2018, Advanced Lithography.

Classification success of six machine learning algorithms in radar ornithology

Carlos Fonseca, Joana Bernardino, Hugo Costa, 2016 .

Critical impact of mask electromagnetic effects on optical proximity corrections performance for 45nm and beyond

Carlos Fonseca, Alan E. Rosenbluth, Kafai Lai, 2007 .

Immersion lithography: New opportunities for semiconductor manufacturing

Carlos Fonseca, Timothy A. Brunner, Nakgeuon Seong, 2004 .