Scott Halle

发表

High-performance circuit design for the RET-enabled 65-nm technology node

Lars W. Liebmann, Arnold Eugene Barish, Zachary Baum, 2004, SPIE Advanced Lithography.

Spatial signature in local overlay measurements: what CD-SEM can tell us and optical measurements can not

Scott Halle, Takumichi Sutani, Atsuko Yamaguchi, 2010, Advanced Lithography.

A 0.135 /spl mu/m/sup 2/ 6F/sup 2/ trench-sidewall vertical device cell for 4 Gb/16 Gb DRAM

Scott Halle, Jack A. Mandelman, Carl J. Radens, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Hardmask technology for sub-100 nm lithographic imaging

Scott Halle, Timothy A. Brunner, Marie Angelopoulos, 2003, SPIE Advanced Lithography.

Insertion strategy for EUV lithography

Lei Sun, Ming He, Scott Halle, 2012, Advanced Lithography.

Concerning the influence of pattern symmetry on CD-SEM local overlay measurements for double patterning of complex shapes

Scott Halle, Takumichi Sutani, Atsuko Yamaguchi, 2010, Advanced Lithography.

Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations

Kafai Lai, Scott Halle, Aasutosh Dave, 2010, Advanced Lithography.

Overlay improvement roadmap: strategies for scanner control and product disposition for 5-nm overlay

Nelson Felix, Scott Halle, Allen H. Gabor, 2011, Advanced Lithography.

Scaling rules of phase error control for the manufacturing of alternating phase-shifting masks for 193-nm photolithography and beyond

Scott J. Bukofsky, Scott Halle, Qiang Wu, 2003, SPIE Advanced Lithography.

Combinatorial overlay control for double patterning

Scott Halle, Christopher P. Ausschnitt, 2009 .

Mastering double exposure process window aware OPC by means of virtual targets

Lars W. Liebmann, Zachary Baum, Carlos Fonseca, 2006, SPIE Photomask Technology.

Optimization of pitch-split double patterning phoresist for applications at the 16nm node

Scott Halle, Sen Liu, Shinichiro Kawakami, 2011, 2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.

Dose-focus monitor technique using a critical-dimension scanning electron microscope and its application to local variation analysis

Scott Halle, Timothy A. Brunner, Atsuko Yamaguchi, 2012 .

Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process

Scott Halle, Bernhard Kneer, Emily Gallagher, 2009, Advanced Lithography.

Lens heating challenges for negative tone develop layers with freeform illumination: a comparative study of experimental vs. simulated results

Scott Halle, Youri van Dommelen, Youping Zhang, 2012, Advanced Lithography.

Understanding the trade-offs of thinner binary mask absorbers

Kafai Lai, Scott Halle, Emily Gallagher, 2010, Photomask Technology.

J-REORIENTATION IN THE $H_{2}CO\bar{A}^{1}A_{2}4^{1}1_{0,1}$ ROTATIONAL LEVEL

Scott Halle, Robert W. Field, Stephen L. Coy, 1988 .

Towards manufacturing of advanced logic devices by double-patterning

Scott Halle, Youri van Dommelen, Shinichiro Kawakami, 2011, Advanced Lithography.

Double exposure double etch for dense SRAM: a designer's dream

Scott Halle, Allen H. Gabor, Klaus Herold, 2008, SPIE Advanced Lithography.

Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography

Scott Halle, Atsuko Yamaguchi, Shunsuke Koshihara, 2014, Advanced Lithography.

Detection of Printable EUV Mask Absorber Defects and Defect Adders by Full Chip Optical Inspection of EUV Patterned Wafers

Scott Halle, Ravi Bonam, Luciana Meli, 2017, IEEE Transactions on Semiconductor Manufacturing.

Paving the way to a full chip gate level double patterning application

Zachary Baum, Scott Halle, Henning Haffner, 2007, SPIE Photomask Technology.

Effect of the effective resist diffusion length to the photolithography at 65- and 45-nm nodes: a study with simple and accurate analytical equations

Scott Halle, Zengqin Zhao, Qiang Wu, 2004, SPIE Advanced Lithography.

Application of SEM-based contours for OPC model weighting and sample plan reduction

Scott Halle, Ioana Graur, Marshal Miller, 2015, Advanced Lithography.

Toward defect guard-banding of EUV exposures by full chip optical wafer inspection of EUV mask defect adders

Scott Halle, Ravi Bonam, Martin Burkhardt, 2015, Advanced Lithography.

Dose-focus monitor technique using CD-SEM and application to local variation analysis

Scott Halle, Timothy A. Brunner, Atsuko Yamaguchi, 2012, Advanced Lithography.

Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes

Scott Halle, Takumichi Sutani, Atsuko Yamaguchi, 2011 .

Meeting critical gate linewidth control needs at the 65 nm node

Scott Halle, Allen H. Gabor, Donald J. Samuels, 2006, SPIE Advanced Lithography.

Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography

Scott Halle, Atsuko Yamaguchi, Shunsuke Koshihara, 2016 .

32 nm logic patterning options with immersion lithography

Zachary Baum, Scott Halle, Vito Dai, 2008, SPIE Advanced Lithography.

E-beam inspection of EUV mask defects: To etch or not to etch?

Scott Halle, Fei Wang, Ravi Bonam, 2014, Advanced Lithography.

Qualification, monitoring, and integration into a production environment of the world's first fully programmable illuminator

Scott Halle, Richard Johnson, Hirokazu Kato, 2011, Advanced Lithography.

EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection

Scott Halle, Ravi Bonam, Fei Wang, 2016, SPIE Advanced Lithography.

ACLV driven double-patterning decomposition with extensively added printing assist features (PrAFs)

Carlos Fonseca, Scott Halle, Jason Meiring, 2007, SPIE Advanced Lithography.

Process-window sensitive full-chip inspection for design-to-silicon optimization in the sub-wavelength era

Scott Halle, Lars Liebmann, Gary Crispo, 2005, SPIE Advanced Lithography.

22 nm technology node active layer patterning for planar transistor devices

Scott Halle, Aasutosh Dave, Harry J. Levinson, 2009, Advanced Lithography.

Topography impacts on line-width control for gate level lithography

Scott Halle, Allen H. Gabor, Chidam Kallingal, 2005, SPIE Advanced Lithography.

Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

Scott Halle, Nicole Saulnier, Shunsuke Koshihara, 2016 .

Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography

Scott Halle, Shunsuke Koshihara, Junichi Tanaka, 2015, Advanced Lithography.

Hybrid OPC modeling with SEM contour technique for 10nm node process

Scott Halle, Atsuko Yamaguchi, Shunsuke Koshihara, 2014, Advanced Lithography.

Nitride framed shallow trench isolation (NFSTI) for self-aligned buried strap in high performance trench capacitor DRAM/eDRAM

Scott Halle, Gary B. Bronner, Ramachandra Divakaruni, 2001, 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517).

When is bilayer thin-film imaging suitable: comparison with single-layer resists

Scott Halle, Marie Angelopoulos, Qinghuang Lin, 2001, SPIE Advanced Lithography.

A 0.135 pm2 6F2 Trench-Sidewall Vertical Device Cell for 4Gb/l6Gb DRAM

Scott J. Bukofsky, Scott Halle, Jack A. Mandelman, 2000 .

Assessments of image-based and scatterometry-based overlay targets

Nelson Felix, Scott Halle, Chiew-seng Koay, 2016, SPIE Advanced Lithography.

Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond

Scott Halle, Marie Angelopoulos, Karen Petrillo, 2003, SPIE Advanced Lithography.

Tunable antireflective coatings with built-in hard mask properties facilitating thin-resist processing

Scott Halle, Marie Angelopoulos, Alfred Grill, 2001, SPIE Advanced Lithography.

Study of alternate hardmasks for extreme ultraviolet patterning

Nelson Felix, Scott Halle, Indira Seshadri, 2016 .

Lithographic qualification of new opaque MoSi binary mask blank for the 32-nm node and beyond

Scott Halle, Yasutaka Kikuchi, Ryan Deschner, 2010 .

E-beam inspection of EUV programmed defect wafers for printability analysis

Fei Wang, Scott Halle, Ravi Bonam, 2013, ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.

22-nm-node technology active-layer patterning for planar transistor devices

Scott Halle, Aasutosh Dave, Harry J. Levinson, 2010 .