Hasan M. Nayfeh

Correlation of silicon microroughness with electrical parameters of SOI-AS (silicon-on-insulator with active substrate)

Hasan M. Nayfeh, H. Nayfeh, 1998 .

Infrared spectroscopy and secondary ion mass spectrometry of luminescent, nonluminescent, and metal quenched porous silicon

Hasan M. Nayfeh, H. Nayfeh, M. Nayfeh, 1994 .

RE-ESTABLISHMENT OF PHOTOLUMINESCENCE IN CU QUENCHED POROUS SILICON BY ACID TREATMENT

Hasan M. Nayfeh, Munir H. Nayfeh, Joseph E. Hilliard, 1995 .

Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS

John D. Cressler, Ronald D. Schrimpf, Daniel M. Fleetwood, 2010, 2010 IEEE International Integrated Reliability Workshop Final Report.