D. T. McInturff

发表

Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown multiple quantum wells

Paul W. Juodawlkis, Stephen E. Ralph, Michael R. Melloch, 1998, Photonics West.

Use of nonstoichiometry to form GaAs tunnel junctions

Michael R. Melloch, Eric S. Harmon, Jerry M. Woodall, 1997 .

Inhibited oxidation in low‐temperature grown GaAs surface layers observed by photoelectron spectroscopy

D. B. Janes, Jerry M. Woodall, D. T. McInturff, 1996 .

Doping concentration dependence of radiance and optical modulation bandwidth in carbon‐doped Ga0.51In0.49P/GaAs light‐emitting diodes grown by gas source molecular beam epitaxy

J. A. Kash, Peter D. Kirchner, D. T. McInturff, 1992 .

Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001)

Fred H. Pollak, John L. Freeouf, Jeffery L. Gray, 1997 .

Ultrafast carrier dynamics and optical nonlinearities of low‐temperature‐grown InGaAs/InAlAs multiple quantum wells

Paul W. Juodawlkis, Stephen E. Ralph, D. T. McInturff, 1996 .

Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

Paul W. Juodawlkis, Stephen E. Ralph, Randall M. Feenstra, 1999 .

Stability of a low-temperature grown GaAs surface layer following air exposure using tunneling microscopy

D. B. Janes, Jerry M. Woodall, Seunghun Hong, 1996 .

Characterization of photochemically unpinned GaAs

Carl W. Wilmsen, Peter D. Kirchner, Jerry M. Woodall, 1988 .

Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

Michael R. Melloch, John L. Freeouf, Jerry M. Woodall, 1990 .