K. C. Hsieh

发表

A 2.488–11.2 Gb/s SerDes in 40 nm low-leakage CMOS with multi-protocol compatibility for FPGA applications

Mahmudul Hassan, Khaldoon Abugharbieh, Chethan Rao, 2014 .

Coded-aperture devices for viewing extended objects from space

Bill R. Sandel, Charles C. Curtis, Virginia Ann Drake, 1992, Optics & Photonics.

Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

Temperature dependence of hole mobility in carbon-doped GaAs grown by LP-MOCVD and MOMBE

K. C. Hsieh, J. N. Baillargeon, Stephen A. Stockman, 1991 .

The gas source molecular beam epitaxial growth of AlxGa1−xP on (100) GaP

K. C. Hsieh, J. N. Baillargeon, K. Cheng, 1990 .

Growth and characterization of InxGa1−xAs on Si by molecular‐beam epitaxy

K. C. Hsieh, J. N. Baillargeon, K. Y. Cheng, 1990 .

Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers

K. C. Hsieh, H. C. Lin, K. Cheng, 2002 .

Metalorganic chemical vapor deposition growth of high-quality InAs∕GaSb type II superlattices on (001) GaAs substrates

Russell D. Dupuis, Shin Mou, K. C. Hsieh, 2006 .

Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1988 .

Surface morphology control of InAs nanostructures grown on InGaAs/InP

G. W. Pickrell, K. C. Hsieh, H. C. Lin, 2003 .

Growth and characterization of metamorphic Inx(AlGa)1−xAs/InxGa1−xAs high electron mobility transistor material and devices with X=0.3–0.4

C. S. Whelan, W. E. Hoke, A. Torabi, 2000 .

Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion

Thomas L. Paoli, Robert D. Burnham, Dennis G. Deppe, 1986 .

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

A. Torabi, William E. Hoke, R. A. McTaggart, 1997 .

Compositional modulation and long‐range ordering in GaP/InP short‐period superlattices grown by gas source molecular beam epitaxy

K. C. Hsieh, J. N. Baillargeon, K. Cheng, 1990 .

Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source

Thomas L. Paoli, Robert D. Burnham, Robert L. Thornton, 1987 .

Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers

Robert D. Burnham, William Streifer, Robert L. Thornton, 1985 .

Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process

K. C. Hsieh, J. N. Baillargeon, K. Cheng, 1992 .

Improvement of wet-oxidized AlxGa1−xAs (x∼1) through the use of AlAs/GaAs digital alloys

G. W. Pickrell, K. C. Hsieh, K. Cheng, 2000 .

Stability of 300 K continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

Experimental evidence for a spontaneously generated effective mass lateral superlattice

K. C. Hsieh, G. S. Horner, Angelo Mascarenhas, 1992 .

Metal organic chemical vapor deposition of metaphorphic InAs GaSb superlattices on (0 0 1) GaAs substrates for mid-IR photodetector applications

Shun Lien Chuang, Russell D. Dupuis, K. C. Hsieh, 2006 .

Dependence on doping type (p/n) of the water vapor oxidation of high‐gap AlxGa1−xAs

Fred A. Kish, K. C. Hsieh, Nick Holonyak, 1992 .

The directionality of quantum confinement on strain-induced quantum-wire lasers

S. T. Chou, K. C. Hsieh, K. Cheng, 1998 .

Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures

Brian T. Cunningham, A. R. Sugg, Louis J. Guido, 1990 .

Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: Interface adhesion and mechanical strength

K. C. Hsieh, K. Y. Cheng, Frank F. Shi, 2003 .

Native‐oxide coupled‐stripe AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers

F. A. Kish, Kathleen Meehan, John Michael Dallesasse, 1991 .