Present and future applications of amorphous silicon and its alloys

Abstract Thin films of amorphous silicon (a-Si:H) and its alloys prepared by the glow discharge decomposition of silane and appropriate gases, are presently incorporated into six commercial products and approximately twenty other applications have been proposed for these materials. This presentation will review the present applications and a number of those proposed for the future. Finally, some of the material and technological issues of current importance will be discussed.

[1]  Y. Nara,et al.  Proposed vertical-type amorphous-silicon field-effect transistors , 1984, IEEE Electron Device Letters.

[2]  H. Okamoto,et al.  Improvement of carrier injection efficiency in a-SiC p-i-n LED using highly-conductive wide-gap p, n type a-SiC prepared by ECR CVD , 1987 .

[3]  A. E. Owen,et al.  Amorphous silicon analogue memory devices , 1989 .

[4]  J. H. Stephen,et al.  The effect ofγ-irradiation on amorphous silicon field effect transistors , 1983 .

[5]  R. Street Localized states in doped amorphous silicon , 1985 .

[6]  Neil Collings,et al.  An amorphous silicon/chiral smectic spatial light modulator , 1988 .

[7]  Jackson,et al.  Mechanisms of thermal equilibration in doped amorphous silicon. , 1988, Physical review. B, Condensed matter.

[8]  A. J. Snell,et al.  The switching mechanism in amorphous silicon junctions , 1985 .

[9]  W. Spear,et al.  Amorphous silicon p‐n junction , 1976 .

[10]  W. Spear,et al.  Electronic properties of substitutionally doped amorphous Si and Ge , 1976 .

[11]  H. Okamoto,et al.  A study of visible-light injection-electroluminescence in a-SiC/p-i-n diode , 1985 .

[12]  D. Carlson,et al.  AMORPHOUS SILICON SOLAR CELL , 1976 .

[13]  A. J. Snell,et al.  Application of amorphous silicon field effect transistors in integrated circuits , 1981 .

[14]  R. Chittick,et al.  The Preparation and Properties of Amorphous Silicon , 1969 .

[15]  A. J. Snell,et al.  A new vertically integrated amorphous silicon addressable image sensor , 1984 .

[16]  W. Spear,et al.  Investigation of the density of localized states in a-Si using the field effect technique , 1976 .

[17]  Alaa Ghaith,et al.  Amorphous-silicon field-effect device and possible application , 1979 .

[18]  A. Owen,et al.  Memory switching in amorphous silicon devices , 1983 .

[19]  Y. Hamakawa,et al.  Visible-Light Injection-Electroluminescent a-SiC/p-i-n Diode , 1985 .

[20]  W. Spear,et al.  Electronic Transport in Amorphous Silicon Films , 1970 .

[21]  W. Spear,et al.  Investigation of the localised state distribution in amorphous Si films , 1972 .

[22]  H. Tuan,et al.  Large-area a-Si:H TFT arrays for printing, input scanning and electronic copying applications , 1987 .

[23]  W. Spear,et al.  Chapter 6 The Development of the a-Si: H Field-Effect Transistor and Its Possible Applications , 1984 .

[24]  R. R. Bell,et al.  Satellite slant-path attenuation statistics obtained using 20 and 30 GHz passive radiometers at Martlesham Heath , 1979 .