A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiOx-based resistive switching memory
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Jack C. Lee | S. Sze | Kuan‐Chang Chang | Ting‐Chang Chang | T. Tsai | F. Zhou | B. Fowler | Yao-Feng Chang | Ying-Chen Chen | Chih-Hung Pan | T. Chang | Yao‐Feng Chang | Ying‐Chen Chen