A highly manufacturable 0.25/spl mu/m RF technology utilizing a unique SiGe integration
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F. Johnson | J. Ai | S. Dunn | B. El Kareh | J. Erdeljac | S. John | K. Benaissa | A. Bellaour | B. Benna | L. Hodgson | G. Hoffleisch | L. Hutter | M. Jaumann | R. Jumpertz | M. Mercer | M. Nair | J. Seitchik | C. Shen | M. Schiekofer | T. Scharnagl | K. Schimpf | U. Schulz | B. Staufer | L. Stroth | D. Tatman | M. Thompson | B. Williams | K. Violette
[1] T. Kamins. Pattern sensitivity of selective Si1−xGex chemical vapor deposition: Pressure dependence , 1993 .
[2] A manufacturable high performance quarter micron CMOS technology using I-line lithography and gate linewidth reduction etch process , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.
[3] Loading Effects During Low-Temperature Seg Of Si And SiGe , 1998 .