A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor

Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space in order to design a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self-polarization and includes all band-to-band tunneling current components, which are shown to represent the major limitation to transistor operation, because the achievable energy gap is not sufficient to obtain a large Ion/Ioff ratio.

[1]  Andre K. Geim,et al.  The rise of graphene. , 2007, Nature materials.

[2]  B. Persson,et al.  Controlling the Electronic Structure of Bilayer Graphene , 2006 .

[3]  Jie Chen,et al.  Emerging nanodevice paradigm: Graphene-based electronics for nanoscale computing , 2009, JETC.

[4]  N. M. R. Peres,et al.  Electronic properties of bilayer and multilayer graphene , 2007, 0712.3259.

[5]  Edward McCann Asymmetry gap in the electronic band structure of bilayer graphene , 2006 .

[6]  T. Ohta,et al.  Controlling the Electronic Structure of Bilayer Graphene , 2006, Science.

[7]  K. Natori Ballistic metal-oxide-semiconductor field effect transistor , 1994 .

[8]  G. Iannaccone,et al.  On the Possibility of Tunable-Gap Bilayer Graphene FET , 2008, IEEE Electron Device Letters.

[9]  Jie Chen,et al.  Emerging nanocircuit paradigm: Graphene-based electronics for nanoscale computing , 2007, 2007 IEEE International Symposium on Nanoscale Architectures.

[10]  I. Chuang,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004 .

[11]  V. Ryzhii,et al.  Thermionic and tunneling transport mechanisms in graphene field‐effect transistors , 2008 .

[12]  M. Rooks,et al.  Graphene nano-ribbon electronics , 2007, cond-mat/0701599.

[13]  F. Guinea,et al.  Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. , 2006, Physical review letters.

[14]  Jing Guo,et al.  Analysis of ballistic monolayer and bilayer graphene field-effect transistors , 2008 .

[15]  Hongjie Dai,et al.  Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters , 2000 .

[16]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[17]  G. Fiori,et al.  Simulation of Graphene Nanoribbon Field-Effect Transistors , 2007, IEEE Electron Device Letters.

[18]  A. Rinzler,et al.  Electronic structure of atomically resolved carbon nanotubes , 1998, Nature.

[19]  尾辻 泰一,et al.  Device model for graphene bilayer field-effect transistor , 2009 .

[20]  S. Louie,et al.  Energy gaps in graphene nanoribbons. , 2006, Physical Review Letters.

[21]  S. Iijima Helical microtubules of graphitic carbon , 1991, Nature.

[22]  Jannik C. Meyer,et al.  The structure of suspended graphene sheets , 2007, Nature.

[23]  P. Kim,et al.  Energy band-gap engineering of graphene nanoribbons. , 2007, Physical review letters.

[24]  S. Stankovich,et al.  Preparation and characterization of graphene oxide paper , 2007, Nature.

[25]  F. Guinea,et al.  The electronic properties of graphene , 2007, Reviews of Modern Physics.

[26]  P. Wallace The Band Theory of Graphite , 1947 .

[27]  H. Dai,et al.  Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors , 2008, Science.

[28]  V P Gusynin,et al.  Unconventional integer quantum Hall effect in graphene. , 2005, Physical review letters.

[29]  Scott S. Verbridge,et al.  Electromechanical Resonators from Graphene Sheets , 2007, Science.

[30]  F. Guinea,et al.  Electronic properties of a biased graphene bilayer , 2008, Journal of physics. Condensed matter : an Institute of Physics journal.

[31]  A. Geim,et al.  Two-dimensional gas of massless Dirac fermions in graphene , 2005, Nature.

[32]  Y. Awano,et al.  Performance Estimation of Graphene Field-Effect Transistors Using Semiclassical Monte Carlo Simulation , 2008 .