Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits
暂无分享,去创建一个
[1] Joe W. McPherson,et al. Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data , 2004 .
[2] H. Cui,et al. Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions , 2004 .
[3] Fernanda Irrera. Degradation kinetics of thermal oxides , 2001 .
[4] J. McPherson,et al. Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics , 2000 .
[5] Chang,et al. Excitons and optical properties of alpha-quartz , 2000, Physical review letters.
[6] P. Blöchl. First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen , 2000 .
[7] Rudolf Ludeke,et al. Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy , 2000, IBM J. Res. Dev..
[8] F. Albert Cotton,et al. Advanced Inorganic Chemistry , 1999 .
[9] J. McPherson,et al. UNDERLYING PHYSICS OF THE THERMOCHEMICAL E MODEL IN DESCRIBING LOW-FIELD TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SIO2 THIN FILMS , 1998 .
[10] E. Cartier,et al. MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDE FILMS , 1995 .
[11] D. Arnold,et al. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon , 1993 .
[12] James Stasiak,et al. Trap creation in silicon dioxide produced by hot electrons , 1989 .
[13] Massimo V. Fischetti,et al. Electron heating studies in silicon dioxide: Low fields and thick films , 1986 .
[14] Tierney,et al. Direct observation of the threshold for electron heating in silicon dioxide. , 1986, Physical review letters.
[15] Paul M. Solomon,et al. Direct measurement of the energy distribution of hot electrons in silicon dioxide , 1985 .
[16] M. Shatzkes,et al. Statistics of breakdown , 1981 .