IGBT negative gate capacitance and related instability effects
暂无分享,去创建一个
I. Omura | W. Fichtner | H. Ohashi | W. Fichtner | I. Omura | H. Ohashi
[1] M. Bruckmann,et al. Improved 3.5 kV IGBT-diode chipset and 800 A module applications , 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.
[2] W. Fichtner,et al. A filamentation-free insulated-gate controlled thyristor and comparisons to the IGBT , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
[3] Ichiro Omura,et al. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor , 1993, Proceedings of IEEE International Electron Devices Meeting.
[4] H. Hagino,et al. A study on the IGBT's turn-off failure and inhomogeneous operation , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.