Anomalous resistive switching phenomenon
暂无分享,去创建一个
Anthony O'Neill | Peter K. Petrov | Jonathan P. Goss | Neil McN. Alford | A. O'Neill | Kelvin S. K. Kwa | P. Petrov | N. Alford | J. Goss | B. Zou | Bin Zou | Shahin Mojarad | Shahin A. Mojarad
[1] R. V. Overstraeten,et al. Role of trap states in the insulator region for MIM characteristics , 1975 .
[2] Q. Jia,et al. Temperature-dependent leakage mechanisms of Pt/BiFeO3/SrRuO3 thin film capacitors , 2007 .
[3] L. Goux,et al. Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device , 2012 .
[4] A. Sawa,et al. Relationship between resistive switching characteristics and band diagrams of Ti / Pr 1 − x Ca x MnO 3 junctions , 2009 .
[5] D. Ielmini,et al. Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories , 2011, Nanotechnology.
[6] D. Ielmini,et al. Analysis and modeling of resistive switching statistics , 2012 .
[7] Hyunsang Hwang,et al. A Materials Approach to Resistive Switching Memory Oxides , 2008 .
[8] P. Ehrhart,et al. Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes , 2006 .
[9] Z. Mi,et al. Effects of metal contacts and dopants on the performance of ZnO-based memristive devices , 2011 .
[10] A. Bell,et al. Local resistive switching of Nd doped BiFeO3 thin films , 2012 .
[11] R. Waser,et al. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.
[12] S. Rhee,et al. Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices , 2009 .
[13] Sergei V. Kalinin,et al. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films. , 2009, Nature materials.
[14] R. Evarestov,et al. Confinement effects for ionic carriers in SrTiO3 ultrathin films: first-principles calculations of oxygen vacancies. , 2011, Physical chemistry chemical physics : PCCP.
[15] T. Tseng,et al. Resistive switching characteristics of nickel silicide layer embedded HfO2 film , 2012 .
[16] J. Yang,et al. Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.
[17] Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure , 2012 .
[18] K. Eshraghian. Evolution of Nonvolatile Resistive Switching Memory Technologies: The Related Influence on Hetrogeneous Nanoarchitectures , 2010 .
[19] Z. S. Wang,et al. Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure , 2012 .
[20] D. Stewart,et al. The missing memristor found , 2008, Nature.
[21] M. Wu,et al. Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism , 2012 .
[22] Marc Porti,et al. Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures , 2012 .
[23] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[24] He Tian,et al. Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application , 2012 .
[25] Myoung-Jae Lee,et al. Modeling for bipolar resistive memory switching in transition-metal oxides , 2010 .
[26] A. O'Neill,et al. A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor , 2012 .
[27] Yoshio Nishi,et al. Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer , 2012 .
[28] D. Jeong,et al. Tunneling-assisted Poole-Frenkel conduction mechanism in HfO2 thin films , 2005 .
[29] Keun-Ho Lee,et al. A unified model for unipolar resistive random access memory , 2012 .
[30] P. Bristowe,et al. Ab initio study of the oxygen vacancy in SrTiO3 , 2001 .
[31] A. Sawa. Resistive switching in transition metal oxides , 2008 .
[32] S. Ha,et al. Adaptive oxide electronics: A review , 2011 .
[33] C. Gerber,et al. Reproducible switching effect in thin oxide films for memory applications , 2000 .