Anomalous resistive switching phenomenon

Resistive switching was observed in Pt/SrTiO3/Pt capacitor devices. The switching depends on both the amplitude and polarity of the applied voltage and cannot be described as either bipolar or unipolar resistive switching. We term this behavior antipolar due to the opposite polarity of the set voltage relative to the previous reset voltage. A model based on electron injection by tunneling at interfaces and a Poole-Frenkel mechanism through the bulk is proposed. This model is quantified by use of a simple mathematical equation to simulate the experimental results.

[1]  R. V. Overstraeten,et al.  Role of trap states in the insulator region for MIM characteristics , 1975 .

[2]  Q. Jia,et al.  Temperature-dependent leakage mechanisms of Pt/BiFeO3/SrRuO3 thin film capacitors , 2007 .

[3]  L. Goux,et al.  Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device , 2012 .

[4]  A. Sawa,et al.  Relationship between resistive switching characteristics and band diagrams of Ti / Pr 1 − x Ca x MnO 3 junctions , 2009 .

[5]  D. Ielmini,et al.  Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories , 2011, Nanotechnology.

[6]  D. Ielmini,et al.  Analysis and modeling of resistive switching statistics , 2012 .

[7]  Hyunsang Hwang,et al.  A Materials Approach to Resistive Switching Memory Oxides , 2008 .

[8]  P. Ehrhart,et al.  Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes , 2006 .

[9]  Z. Mi,et al.  Effects of metal contacts and dopants on the performance of ZnO-based memristive devices , 2011 .

[10]  A. Bell,et al.  Local resistive switching of Nd doped BiFeO3 thin films , 2012 .

[11]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[12]  S. Rhee,et al.  Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices , 2009 .

[13]  Sergei V. Kalinin,et al.  Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films. , 2009, Nature materials.

[14]  R. Evarestov,et al.  Confinement effects for ionic carriers in SrTiO3 ultrathin films: first-principles calculations of oxygen vacancies. , 2011, Physical chemistry chemical physics : PCCP.

[15]  T. Tseng,et al.  Resistive switching characteristics of nickel silicide layer embedded HfO2 film , 2012 .

[16]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[17]  Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure , 2012 .

[18]  K. Eshraghian Evolution of Nonvolatile Resistive Switching Memory Technologies: The Related Influence on Hetrogeneous Nanoarchitectures , 2010 .

[19]  Z. S. Wang,et al.  Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure , 2012 .

[20]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[21]  M. Wu,et al.  Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism , 2012 .

[22]  Marc Porti,et al.  Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures , 2012 .

[23]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[24]  He Tian,et al.  Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application , 2012 .

[25]  Myoung-Jae Lee,et al.  Modeling for bipolar resistive memory switching in transition-metal oxides , 2010 .

[26]  A. O'Neill,et al.  A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor , 2012 .

[27]  Yoshio Nishi,et al.  Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer , 2012 .

[28]  D. Jeong,et al.  Tunneling-assisted Poole-Frenkel conduction mechanism in HfO2 thin films , 2005 .

[29]  Keun-Ho Lee,et al.  A unified model for unipolar resistive random access memory , 2012 .

[30]  P. Bristowe,et al.  Ab initio study of the oxygen vacancy in SrTiO3 , 2001 .

[31]  A. Sawa Resistive switching in transition metal oxides , 2008 .

[32]  S. Ha,et al.  Adaptive oxide electronics: A review , 2011 .

[33]  C. Gerber,et al.  Reproducible switching effect in thin oxide films for memory applications , 2000 .