Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
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L. Dilillo | F. Wrobel | F. Saigné | H. Puchner | V. Ferlet-Cavrois | A. Virtanen | V. Gupta | G. Tsiligiannis | A. Javanainen | H. Kettunen | A. L. Bosser | S. D. LaLumondiere | D. Brewe | T. Gil
[1] S. Summerfelt,et al. High Temperature Data Retention of Ferroelectric Memory on 130nm and 180nm CMOS , 2016, 2016 IEEE 8th International Memory Workshop (IMW).
[2] G. Tsiligiannis,et al. Multiple Cell Upset Classification in Commercial SRAMs , 2014, IEEE Transactions on Nuclear Science.
[3] R. Koga,et al. Comparison of Single Event Transients Generated by Short Pulsed X-Rays, Lasers and Heavy Ions , 2014, IEEE Transactions on Nuclear Science.
[4] V. Pouget,et al. Evaluation of recent technologies of non-volatile RAM , 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.
[5] G. Tsiligiannis,et al. Dynamic Test Methods for COTS SRAMs , 2014, IEEE Transactions on Nuclear Science.
[6] J. M. Benedetto,et al. Single event upset immunity of strontium bismuth tantalate ferroelectric memories , 1999 .
[7] Yuan-Kai Zhang,et al. Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- $60~\gamma $ Ray Radiation Sources , 2017, IEEE Transactions on Nuclear Science.
[8] M.D. Berg,et al. Compendium of Recent Single Event Effects Results for Candidate Spacecraft Electronics for NASA , 2008, 2008 IEEE Radiation Effects Data Workshop.
[9] P. V. Dressendorfer,et al. Total-dose radiation-induced degradation of thin film ferroelectric capacitors , 1990 .
[10] Bin Li,et al. Single Event Effects in COTS Ferroelectric RAM Technologies , 2015, 2015 IEEE Radiation Effects Data Workshop (REDW).
[11] B. L. Bhuva,et al. An SEU-Tolerant DICE Latch Design With Feedback Transistors , 2015, IEEE Transactions on Nuclear Science.
[12] Gabriel Torrens,et al. Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies , 2015 .