The conduction mechanism in silicon nitride films

A simple analytical model for the conduction mechanism in silicon nitride films is proposed. The model is based on double injection, trap space‐charge‐limited current, and internal recombination. The Poole‐Frenkel behavior arises from the Frenkel behavior of one of the traps responsible for the space charge. The model was shown to agree with experimental results on the thickness dependence of the current‐voltage characteristic, to be compatible with MNOS device models, and to agree with observations of two‐carrier conduction at the negative electrode.

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