Dielectric charge traps. A new structure element for power devices

The progress in SOI technologies, especially SIMOX and Silicon Direct Bonding, suggests a new type of structural element which could improve device blocking behavior in various aspects. A novel structure element for realizing high breakdown voltages in power devices is analyzed using numerical simulations. We propose dielectric structures which in strong vertical fields collect majority or minority carriers. These structures enable surprising new solutions for various problems. Improved high voltage field plates, surface field reduced Schottky rectifiers, dynamic buffers and Ron improved unipolar devices can be achieved.

[1]  B. Jayant Baliga,et al.  Trench MOS Barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage , 1995 .

[2]  Wolfgang Wondrak,et al.  Very high voltage integration in SOI based on a new floating channel technology , 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).

[3]  M. Mehrotra,et al.  The trench MOS barrier Schottky (TMBS) rectifier , 1993, Proceedings of IEEE International Electron Devices Meeting.

[4]  J. Tihanyi,et al.  A new generation of high voltage MOSFETs breaks the limit line of silicon , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[5]  Bantval J. Baliga,et al.  Comparison of high voltage rectifier structures , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.