论文信息 - Migration enhancement on ZnSe surface in photoassisted molecular beam epitaxy and long duration time of the effects - 字舞流文

Migration enhancement on ZnSe surface in photoassisted molecular beam epitaxy and long duration time of the effects

J. Saraie | N. Matsumura | Susumu Ichikawa | Ken-ichi Senga | K. Yamawaki

[1] A. Kar,et al. Band‐edge refractive optical nonlinearities in molecular beam‐grown ZnSe epilayers , 1993 .

[2] S. Y. Wang,et al. UV laser assisted growth of molecular beam epitaxial ZnSe , 1992 .

[3] T. Fukada,et al. Study on the behavior of surface adatoms during photoassisted MBE of ZnSe and improvement of surface morphology , 1991 .

[4] T. Fukada,et al. Photo-assisted MBE growth of ZnSe on GaAs substrates , 1991 .

[5] H. Saito,et al. Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEED , 1991 .

[6] T. Fukada,et al. Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy , 1990 .

[7] Y. Miyanagi,et al. Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation , 1990 .

[8] T. Fukada,et al. Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameter , 1990 .