Discharge produced plasma source for EUV lithography

Extreme ultraviolet (EUV) radiation is seen as the most promising candidate for the next generation of lithography and semiconductor chip manufacturing for the 32 nm node and below. The paper describes experimental results obtained with discharge produced plasma (DPP) sources based on pinch effect in a Xe and Sn vapour as potential tool for the EUV lithography. Problems of DPP source development are discussed.