The influence of the base resistance modulation on switching losses in IGBTS

This paper describes how the switching losses of IGBTs are influenced by the base resistance and its modulation due to the injected base charge. The calculation of the base resistance has been included in the IGBT model. It considers the shape of the charge carrier distribution in the dynamic case. With it, accurate results of the simulation are obtainable. This effect has been analyzed by measurements and simulations of two different IGBT-types. The influence of resistive and inductive load was also investigated. Parasitic elements in the commutation loop were taken into consideration.

[1]  Kurt Hoffmann,et al.  An analytical model of IGBTs with low emitter efficiency , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[2]  Lawrence D. Abraham,et al.  Determination of switching losses in IGBTs by loss-summation-method , 1995, IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting.

[3]  G. Bober,et al.  Qualification of IGBT's and SIRET for high frequency inverter application , 1990 .

[4]  Francesco Profumo,et al.  Losses Evaluation in High Power Devices PWM Inverter Motor Drives , 1991 .

[5]  Holger Goebel.  Hybrid-Verfahren zur Modellierung leistungselektronischer Bauelemente , 1993 .