Multi-scale electrothermal simulation and modelling of resistive random access memory devices

Resistive random-access memories (RRAMs) operate with low power dissipation, low cost-per-bit, and high endurance, and are suitable for integration in crossbar arrays in 3D chips. These attributes make RRAM devices well-suited for a variety of applications ranging from novel processor architectures and high-density memories to neuromorphic computing and neural networks. We employ a unique suite of simulation tools to study resistance switching in oxide-based RRAM structures. We use Si-rich silica (SiOx) RRAMs as an example in this study. Silica-based RRAM technology provides an additional and unique advantage; it could be easily integrated with silicon microelectronics. Existing modeling work on RRAMs has relied heavily on classical phenomenological methods and two-dimensional (2D) modeling tools. We apply an advanced multi-scale three-dimensional (3D) simulator to investigate switching in these promising devices, and highlight their potential for low-power applications. Our physics-based electrothermal 3D simulator is very well-calibrated with experimental data, coupling self-consistently stochastic kinetic Monte Carlo descriptions of oxygen ion and electron transport, to the local electric fields and temperature. The simulator is used to demonstrate the impact of self-heating effects and also to emphasize on the necessity of 3D physical modelling to predict correctly the switching phenomenon.

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