Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales
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M. V. Ponomarev | M. Creatore | W. Kessels | H. Knoops | S. Smit | B. V. D. Loo | J. Weber | Kashish Sharma | Bas | W. H. V. D. Loo
[1] H. Fujiwara,et al. Ellipsometry characterization of polycrystalline ZnO layers with the modeling of carrier concentration gradient: Effects of grain boundary, humidity, and surface texture , 2014 .
[2] H. Stiebig,et al. Modelling of infrared optical constants for polycrystalline low pressure chemical vapour deposition ZnO:B films , 2013 .
[3] S. M. Rozati,et al. Carrier transport and bandgap shift in n-type degenerate ZnO thin films: The effect of band edge nonparabolicity , 2012 .
[4] K. Ellmer. Past achievements and future challenges in the development of optically transparent electrodes , 2012, Nature Photonics.
[5] M. V. Ponomarev,et al. Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition (vol 112, 043708, 2012) , 2012 .
[6] D. Milliron,et al. Extracting reliable electronic properties from transmission spectra of indium tin oxide thin films and nanocrystal films by careful application of the Drude theory , 2012 .
[7] A. Subrahmanyam,et al. Grain Boundary Carrier Scattering in ZnO Thin Films: a Study by Temperature-Dependent Charge Carrier Transport Measurements , 2012, Journal of Electronic Materials.
[8] B. Lacroix,et al. Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition , 2011, Journal of physics. Condensed matter : an Institute of Physics journal.
[9] N. Ehrmann,et al. Ellipsometric studies on ZnO:Al thin films: Refinement of dispersion theories , 2010 .
[10] Takahiro Yamada,et al. Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films , 2010 .
[11] C. Ballif,et al. Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells , 2010 .
[12] Van de Sanden,et al. B-spline parametrization of the dielectric function applied to spectroscopic ellipsometry on amorphous carbon , 2009 .
[13] Bernd Rech,et al. Optical modeling of free electron behavior in highly doped ZnO films , 2009 .
[14] Anderson Janotti,et al. Fundamentals of zinc oxide as a semiconductor , 2009 .
[15] K. S. Lee,et al. Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films , 2008 .
[16] Christophe Ballif,et al. Electrical transport in boron‐doped polycrystalline zinc oxide thin films , 2008 .
[17] K. Ellmer,et al. Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide , 2008 .
[18] Blaine D. Johs,et al. Dielectric function representation by B‐splines , 2008 .
[19] Ryan O'Hayre,et al. General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films , 2008 .
[20] M.C.M. van de Sanden,et al. In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition , 2008 .
[21] S. Ray,et al. Effect of Al concentration in grain and grain boundary region of Al-doped ZnO films: a dielectric approach , 2008 .
[22] I. Volintiru,et al. Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition , 2007 .
[23] Brian J. Smith,et al. Photon wave functions, wave-packet quantization of light, and coherence theory , 2007, 0708.0831.
[24] Yujia Zeng,et al. Carrier concentration dependence of band gap shift in n-type ZnO:Al films , 2007 .
[25] C. Ballif,et al. Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films , 2007 .
[26] R. M. Mehra,et al. Band gap widening and narrowing in moderately and heavily doped n-ZnO films , 2006 .
[27] R. Schropp,et al. Property control of expanding thermal plasma deposited textured zinc oxide with focus on thin film solar cell applications , 2005 .
[28] Hiroyuki Fujiwara,et al. Effects of carrier concentration on the dielectric function of ZnO:Ga and In 2 O 3 : Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption , 2005 .
[29] C. Wolden,et al. Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma-enhanced chemical vapor deposition , 2005 .
[30] F. Ruske,et al. Optical characterization of aluminum-doped zinc oxide films by advanced dispersion theories , 2004 .
[31] I. Chernyshova,et al. Handbook of Infrared Spectroscopy of Ultrathin Films , 2003 .
[32] K. H. Jun,et al. Simulation of depolarization effect by a rough surface for spectroscopic ellipsometry. , 2003, Journal of the Optical Society of America. A, Optics, image science, and vision.
[33] I. Chernyshova,et al. Handbook of Infrared Spectroscopy of Ultrathin Films: Tolstoy/Infrared Spectroscopy , 2003 .
[34] Z. Qiao,et al. Dielectric modelling of optical spectra of thin In2O3 : Sn films , 2002 .
[35] K. Ellmer. Resistivity of polycrystalline zinc oxide films: current status and physical limit , 2001 .
[36] N. V. Smith,et al. Classical generalization of the Drude formula for the optical conductivity , 2001 .
[37] A. Gilmore,et al. Direct measurement of density-of-states effective mass and scattering parameter in transparent conducting oxides using second-order transport phenomena , 2000 .
[38] Hiroyuki Fujiwara,et al. Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films , 2000 .
[39] Craig M. Herzinger,et al. Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation , 1998 .
[40] Michael Vollmer,et al. Optical properties of metal clusters , 1995 .
[41] H. Nguyen,et al. Simultaneous real‐time spectroscopic ellipsometry and reflectance for monitoring thin‐film preparation , 1994 .
[42] Gupta,et al. Hopping conduction in insulating rf-sputtered zinc oxide films. , 1994, Physical review. B, Condensed matter.
[43] John A. Woollam,et al. Techniques for ellipsometric measurement of the thickness and optical constants of thin absorbing films , 1993 .
[44] B. Sernelius,et al. Theoretical optical properties of polar semiconductors used as optical coatings for energy-efficient windows , 1989 .
[45] I. Hamberg,et al. Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows , 1986 .
[46] G. Masetti,et al. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon , 1983, IEEE Transactions on Electron Devices.
[47] Giorgio Baccarani,et al. Transport properties of polycrystalline silicon films , 1978 .
[48] J. Seto. The electrical properties of polycrystalline silicon films , 1975 .
[49] Bernd Rech,et al. Transparent Conductive Zinc Oxide , 2008 .
[50] M. Schubert,et al. Optical Properties of ZnO and Related Compounds , 2008 .
[51] S. Redner. Equilibrium and Non-Equilibrium Statistical Thermodynamics. , 2006 .