Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions
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[1] M. J. Kumar,et al. A Silicon Biristor With Reduced Operating Voltage: Proposal and Analysis , 2015, IEEE Journal of the Electron Devices Society.
[2] Jawar Singh,et al. Potential Benefits and Sensitivity Analysis of Dopingless Transistor for Low Power Applications , 2015, IEEE Transactions on Electron Devices.
[3] M. Jagadesh Kumar,et al. Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer , 2015, Scientific Reports.
[4] D. Abdi,et al. Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis , 2015, IEEE Journal of the Electron Devices Society.
[5] M. J. Kumar,et al. Junctionless Impact Ionization MOS: Proposal and Investigation , 2014, IEEE Transactions on Electron Devices.
[6] Jawar Singh,et al. Design and performance projection of symmetric bipolar charge-plasma transistor on SOI , 2014 .
[7] Shuja A. Abbasi,et al. A high performance charge plasma PN-Schottky collector transistor on silicon-on-insulator , 2014 .
[8] M. Jagadesh Kumar,et al. Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation , 2014, Journal of Display Technology.
[9] Jawar Singh,et al. Charge-Plasma Based Process Variation Immune Junctionless Transistor , 2014, IEEE Electron Device Letters.
[10] M. J. Kumar,et al. Schottky Collector Bipolar Transistor Without Impurity Doped Emitter and Base: Design and Performance , 2013, IEEE Transactions on Electron Devices.
[11] Min-Ho Kang,et al. Highly endurable floating body cell memory: Vertical biristor , 2012, 2012 International Electron Devices Meeting.
[12] M. J. Kumar,et al. Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device , 2012, IEEE Transactions on Electron Devices.
[13] Sungho Kim,et al. Vertically Integrated Unidirectional Biristor , 2011, IEEE Electron Device Letters.
[14] Yang‐Kyu Choi,et al. Biristor—Bistable Resistor Based on a Silicon Nanowire , 2010, IEEE Electron Device Letters.
[15] Jin-Woo Han,et al. Bistable resistor (biristor) - gateless silicon nanowire memory , 2010, 2010 Symposium on VLSI Technology.
[16] Bijoy Rajasekharan,et al. Fabrication and Characterization of the Charge-Plasma Diode , 2010, IEEE Electron Device Letters.
[17] J. Cites,et al. Ultrathin Si Thin-Film Transistor on Glass , 2009, IEEE Electron Device Letters.
[18] C. Salm,et al. The Charge Plasma P-N Diode , 2008, IEEE Electron Device Letters.
[19] P. Singh,et al. A super beta bipolar transistor using SiGe-base surface accumulation layer transistor(SALTran) concept: a simulation study , 2006, IEEE Transactions on Electron Devices.
[20] M.J. Kumar,et al. Surface accumulation Layer transistor (SALTran): a new bipolar transistor for enhanced current gain and reduced hot-carrier degradation , 2004, IEEE Transactions on Device and Materials Reliability.
[21] S. Sze,et al. AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP , 1966 .
[22] Yang‐Kyu Choi,et al. A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation , 2014, IEEE Transactions on Electron Devices.
[23] Shuja A. Abbasi,et al. A high performance charge plasma based lateral bipolar transistor on selective buried oxide , 2013 .