论文信息 - Implant-free high-mobility flatband MOSFET: principles of operation

Implant-free high-mobility flatband MOSFET: principles of operation

Principles of operation of implant-free enhancement-mode MOSFETs (flatband MOSFET) are discussed. Epitaxial-layer structures designed for use in implant-free enhancement-mode devices and employing a high-kappa dielectric (kappacong20) and a strained InGaAs channel layer with a thickness of 10 nm have been manufactured on GaAs substrate. Proceeding from measured electron mobility mu as a function of the sheet-carrier concentration, enhancement-mode design considerations, saturation current IDss, and mobility requirements are discussed using two-dimensional device simulations. For the flatband MOSFET to compete successfully with other device designs, certain minimum channel mobilities are required. For RF applications, mu should exceed 5000 cm2/Vs while high-performance MOSFETs for digital applications may require even higher mobility for optimum operation. Finally, measured data of first 1-mum-GaAs-flatband enhancement-mode MOSFETs are presented; the saturation velocity of the InGaAs channel layer is derived; and measured IDss data are compared to the results obtained by simulations

[1] Matthias Passlack,et al. Development methodology for high-κ gate dielectrics on III–V semiconductors: GdxGa0.4−xO0.6∕Ga2O3 dielectric stacks on GaAs , 2005 .

[2] M. Passlack,et al. Enhancement-Mode GaAs n-Channel MOSFET , 2006, IEEE Electron Device Letters.

[3] R. Chau. Benchmarking nanotechnology for high-performance and low-power logic transistor applications , 2004 .

[4] R. Chau,et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications , 2004, IEEE Transactions on Nanotechnology.

[5] A. Asenov,et al. Monte Carlo Simulation of Implant Free InGaAs MOSFET , 2006 .

[6] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[7] D. Nguyen,et al. High mobility NMOSFET structure with high-/spl kappa/ dielectric , 2005, IEEE Electron Device Letters.

[8] M. Passlack. Methodology for Development of High-κ Stacked Gate Dielectrics on III–V Semiconductors , 2005 .

[9] High Mobility NMOSFET Structure With High- Dielectric , 2005 .

[10] S. Datta,et al. Novel InSb-based quantum well transistors for ultra-high speed, low power logic applications , 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..