论文信息 - An electrically pumped Ge-on-Si laser - 字舞流文

An electrically pumped Ge-on-Si laser

We present the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm.

Jurgen Michel | Yan Cai | R. E. Camacho-Aguilera | N. Patel | J. T. Bessette | M. Romagnoli | L. C. Kimerling | B. Dutt

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