Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

Resistive switching memory (RRAM) based on the redox-induced conductivity change in some metal oxides attracts considerable interest as a new technology for next-generation nonvolatile electronic storage. Although resistance-switching phenomena in several transition metal oxides have been known from decades, the details of the switching mechanisms and the nature of the different resistive states are still largely debated. For nonvolatile memory applications, the scaling potential of RRAMs is the most relevant issue, and understanding the scaling capability of RRAM devices requires a sound interpretation of resistance-switching operation and reliability aspects. This work addresses the scaling dependence of RRAM switching parameters. The dependence on the electrode area and on the size of the conductive filament (CF) responsible for low-resistance memory state is investigated. The RRAM conduction modes depending on CF size are discussed based on temperature dependent resistance analysis. Reset characterist...

[1]  Daniele Ielmini,et al.  Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses , 2007 .

[2]  M. Perego,et al.  Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors , 2008 .

[3]  Guido Torelli,et al.  A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage , 2009, IEEE Journal of Solid-State Circuits.

[4]  Jang‐Sik Lee,et al.  Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices , 2008 .

[5]  Young-Bae Park,et al.  Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films , 2008 .

[6]  M. Aoki,et al.  Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET , 2008, IEEE Transactions on Electron Devices.

[7]  D. Ielmini,et al.  Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories , 2010, IEEE Electron Device Letters.

[8]  D. Ielmini,et al.  Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories , 2010 .

[9]  M. O'keeffe,et al.  DIFFUSION OF OXYGEN IN SINGLE CRYSTALS OF NICKEL OXIDE , 1961 .

[10]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[11]  K. Tsunoda,et al.  Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance , 2008 .

[12]  J. Cho,et al.  Nanoscale formation mechanism of conducting filaments in NiO thin films , 2009 .

[13]  John M. Walls,et al.  Methods of surface analysis , 1989 .

[14]  D. Ielmini,et al.  Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.

[15]  H. Hwang,et al.  Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures , 2008 .

[16]  Daniele Ielmini,et al.  Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses , 2008 .

[17]  M. Perego,et al.  Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) , 2008 .

[18]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[19]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[20]  A. Pirovano,et al.  Analysis of phase distribution in phase-change nonvolatile memories , 2004, IEEE Electron Device Letters.

[21]  D. Ielmini,et al.  Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.

[22]  S.S. Wong,et al.  RESET Mechanism of TiOx Resistance-Change Memory Device , 2009, IEEE Electron Device Letters.

[23]  Jiyoung Kim,et al.  Random and localized resistive switching observation in Pt/NiO/Pt , 2007 .

[24]  D. Ielmini,et al.  Resistance transition in metal oxides induced by electronic threshold switching , 2009 .

[25]  D. Ielmini,et al.  Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices , 2009, IEEE Transactions on Electron Devices.

[26]  I. Baek,et al.  Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory , 2008 .

[27]  W. E. Beadle,et al.  Switching properties of thin Nio films , 1964 .

[28]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.