论文信息 - Electrical properties of LaB6/PZT/Ag structure with asymmetric interface charge distribution

Electrical properties of LaB6/PZT/Ag structure with asymmetric interface charge distribution

Effect of the bottom electrode (LaB6) on electron emission characteristics (current density, excited voltage), leakage current behavior and polarization-voltage hysteresis of the Ag/PbZr0.52Ti0.48O3/LaB6/Al2O3 capacitor has been firstly experimentally investigated by fabricating PbZr 0.52Ti0.48O3 (PZT) and LaB6 films with sol-gel and e-beam evaporation techniques respectively. The current-voltage (I-V) and hysteresis (P-E) characteristics show different charge distribution at the top and bottom interfaces. Leakage current behavior as a function of voltage is interpreted by Schottky charge transport mechanism. Electron emission from the PZT surface under low driving pulses <0.4 V has been detected in vacuum chamber with pressure 4x10-5 Torr. Current densities in the range of 0-105 μA/cm2 have been measured in a diode configuration under 10-22 kV/cm excitation voltages and compared with data reported in the literature.

[1] R. Waser,et al. The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films. II. Numerical simulation and verification , 2002 .

[2] A. Kuzanyan,et al. Optical characteristics of (La, Ce)B6 films deposited on silicon substrates by e-beam evaporation process , 2002 .

[3] Lucian Pintilie,et al. Ferroelectric polarization-leakage current relation in high quality epitaxial Pb ( Zr , Ti ) O 3 films , 2007 .

[4] R. Waser,et al. Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories , 1997 .

[5] G. Mesyats. Electron emission from ferroelectric plasma cathodes , 2008 .

[6] E. Bouyssou,et al. Leakage current conduction in IrO2/PZT/Pt structures , 2005 .

[7] J. Rödel,et al. Current-voltage characteristics for lead zirconate titanate bulk ceramics , 2008 .

[8] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[9] N. Wu,et al. Investigation of Optical and Electrical Properties of Pb(Zr1-xTix)O3 Thin Films on Different Substrates , 2006 .

[10] Ramamoorthy Ramesh,et al. Leakage current mechanisms in lead-based thin-film ferroelectric capacitors , 1999 .

[11] A. Tagantsev,et al. Space-charge influenced-injection model for conduction in Pb(ZrxTi1−x)O3 thin films , 1998 .

[12] D. Temple,et al. LOW VOLTAGE ELECTRON EMISSION FROM PB(ZRXTI1-X)O3-BASED THIN FILM CATHODES , 1995 .