Optical properties and band structure of highly doped gallium nitride
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[1] P. Schley,et al. Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN , 2006 .
[2] J. Bläsing,et al. Anisotropy of effective electron masses in highly doped nonpolar GaN , 2013 .
[3] F. Bechstedt,et al. Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes , 2011 .
[4] N. Esser,et al. Optical properties of magnesium doped AlxGa1−xN (0.61 ≤ x ≤ 0.73) , 2014 .
[5] Rüdiger Goldhahn,et al. Dielectric Function of Nitride Semiconductors: Recent Experimental Results , 2003 .
[6] R. Coffie,et al. AlGaN/AlN/GaN high-power microwave HEMT , 2001, IEEE Electron Device Letters.
[7] C. Weisbuch,et al. Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. , 2013, Physical review letters.
[8] A. A. Kukharskii. Plasmon-phonon coupling in GaAs , 1973 .
[9] Christoph Cobet,et al. Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN , 2013 .
[10] M. Weyers,et al. Si Doping of GaN in Hydride Vapor-Phase Epitaxy , 2013, Journal of Electronic Materials.
[11] J. Bläsing,et al. High Si and Ge n-type doping of GaN doping - Limits and impact on stress , 2012 .
[12] Hunter,et al. UV reflectivity of GaN: Theory and experiment. , 1995, Physical review. B, Condensed matter.
[13] Enrico Bellotti,et al. Saga of efficiency degradation at high injection in InGaN light emitting diodes , 2014 .
[14] N. Esser,et al. Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3 , 2014 .
[15] Hongen Shen,et al. Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates , 2011 .
[16] Oliver Ambacher,et al. Spectroscopic ellipsometry measurements of AlxGa1−xN in the energy range 3–25 eV , 1998 .
[17] J. Bläsing,et al. Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm−3 , 2013 .
[18] S. Denbaars,et al. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy , 2014 .
[19] Moustakas,et al. Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN. , 1994, Physical review. B, Condensed matter.
[20] E. O’Reilly,et al. Band gap bowing and optical polarization switching in Al 1−x Ga x N alloys , 2015 .
[21] C. Cobet,et al. Optical properties of cubic GaN from 1 to 20 eV , 2012 .
[22] K. Delaney,et al. Auger recombination rates in nitrides from first principles , 2009, 0904.3559.
[23] N. Esser,et al. Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy , 2014 .
[24] Eric L. Shirley,et al. Ab initio calculation of ε 2 ( ω ) including the electron-hole interaction: Application to GaN and CaF 2 , 1999 .
[25] F. Bechstedt,et al. Ab initiocalculation of optical properties with excitonic effects in wurtzite InxGa1−xN and InxAl1−xN alloys , 2013 .
[26] W. Schmidt,et al. GaNm-plane: Atomic structure, surface bands, and optical response , 2015 .
[27] G. Gobsch,et al. Spectroscopic ellipsometry of wurtzite ZnO and GaN: Examination of a special case , 2010 .
[28] S. Nakamura. Current Status of GaN-Based Solid-State Lighting , 2009 .