A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities

A broadband and scalable model is developed to accurately simulate on-chip inductors of various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies up to 20 GHz, even beyond resonance. A new scheme of RLC networks is deployed for spiral coils and substrate to account for 3D eddy current, substrate return path, and spiral coil to substrate coupling effects, etc. The 3D eddy current is identified as the key element essential to accurately simulate broadband characteristics. EM simulation using ADS momentum is conducted to predict the on-chip inductor performance corresponding to wide range of substrate resistivities (rhoSi=0.05~KOmega-cm). Three operation modes such as TEM, slow-wave, and eddy current are reproduced. The model parameters manifest themselves physics-base through relevant correlation with rhoSi over three operation modes. The onset of slow-wave mode can be consistently explained by a key element (RP) introduced in our model, which accounts for the conductor loss due to eddy current arising from magnetic field coupling through substrate return path. This broadband and scalable model is useful for RF circuit simulation. Besides, it can facilitate optimization design of on-chip inductors through physics-based model parameters relevant to varying substrate resistivities

[1]  Hyungcheol Shin,et al.  Simple wide-band on-chip inductor model for silicon-based RF ICs , 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

[2]  Yu Cao,et al.  Frequency-independent equivalent circuit model for on-chip spiral inductors , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).

[3]  J.C. Guo,et al.  A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

[4]  S. Wong,et al.  Physical modeling of spiral inductors on silicon , 2000 .

[5]  Cheon Soo Kim,et al.  The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology , 1998 .

[6]  Jyh-Chyurn Guo,et al.  A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects , 2006, IEEE Transactions on Electron Devices.

[7]  M. Fujishima,et al.  Accurate subcircuit model of an on-chip inductor with a new substrate network , 2004, 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525).

[8]  J.C. Guo,et al.  The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips , 2003, IEEE International Electron Devices Meeting 2003.

[9]  H. Hasegawa,et al.  Properties of Microstrip Line on Si-SiO/sub 2/ System , 1971 .