Electron-phonon interaction during resonant tunneling through a double-barrier heterostructure

Abstract We investigated thoroughly the current-voltage characteristic and the differential conductance of AlGaAs-based resonant-tunneling diodes. We have revealed a fine oscillatory structure of the broad plateau beyond the main resonance peak, displaying a period of 36 mV. We argue that this plateau represents a convolution of several satellite peaks resulting from the resonant tunneling via coupled electron-phonon states in the quantum well.

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