论文信息 - Effect of Fermi Level Pinning at the Surface During OMVPE Growth - 字舞流文

Effect of Fermi Level Pinning at the Surface During OMVPE Growth

C. Y. Chen | R. M. Cohen | P. Chi | D. Simons | W. M. Li

[1] C. Y. Chen,et al. Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium , 1995 .

[2] R. M. Cohen. Interdiffusion in alloys of the GaInAsP system , 1993 .

[3] Dennis G. Deppe,et al. Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs‐GaAs npn bipolar transistors , 1990 .

[4] K. Yamaguchi,et al. Zinc-doped GaAs epilayers grown by atmospheric-pressure MOCVD using diethylzinc , 1989 .

[5] U. Gösele,et al. Diffusion mechanisms and superlattice disordering in GaAs , 1988 .

[6] G. B. Stringfellow. The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxy , 1986 .